HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS

HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes FEATURES ●Low switching noise ●Lowforward voltage drop ●Lowthermal resistance ●High current capability ●Highfast switching capability ●High surge capacity

HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Ampere FEATURES · Glass passivated chip junction · Low power loss, high efficiency · Low leakage · High speed switching · High current capacity, high surge capacity · High temperature soldering guaranteed · 200℃/10 second, 0.1

GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS

GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 8.0 Amperes Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame Retardant Epoxy Molding Compound • Low power loss,

8A 800V Fast recovery diode

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HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER DIODES

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High Efficiency Glass Passivated Rectifiers

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HIGH EFFICIENCY GLASS PASSIVATED RECTIFIERS

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HIGH EFFICIENCY RECTIFIER VOLTAGE 800 Volts CURRENT 8.0 Amperes

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GLASS PASSIVATED HIGH EFFICENCY RECTIFIER

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高效整流管

8.0 AMPS. Glass Passivated High Efficient Rectifiers

8.0 AMPS. Glass Passivated High Efficient Rectifiers Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free wheeling, and polari

8.0 AMPS. Glass Passivated High Efficient Rectifiers

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FRD芯片

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)