20 mm (0.8 inch) Seven Segment Displays

Description The 20 mm (0.8 inch) LED seven segment displays are designed for viewing distances up to 10 metres (33 feet). These devices use an industry standard size package and pinout. All devices are available as either common anode or common cathode. These displays are ideal for most applicat

20 mm (0.8 inch) Seven Segment Displays

Description The 20 mm (0.8 inch) LED seven segment displays are designed for viewing distances up to 10 metres (33 feet). These devices use an industry standard size package and pinout. All devices are available as either common anode or common cathode. These displays are ideal for most applicat

20 mm (0.8 inch) Seven Segment Displays

The 20 mm (0.8 inch) displays use industry standard size and pin-out.This is an AlGaAs Common Anode device with Right Hand Decimal.This light gray-faced displays is suitable for indoor use.

封装/外壳：18-DIP（0.600"，15.24mm），12 引线 包装：卷带（TR） 描述：DISPLAY 7-SEG 0.8\ 光电器件 显示器模块 - LED 字符与数字

20 mm (0.8 inch) Seven Segment Displays

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DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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