10 mm (0.40 inch) Seven Segment Displays

Description The 10 mm (0.40 inch) LED seven segment displays are Avago’s most space-efficient character size. They are designed for viewing distances up to 4.5 metres (15 feet). These devices use an industry standard size package and pinout. The dual numeric, single numeric, and ± 1. overflow dev

10 mm (0.4 inch) Seven Segment Displays

The 10 mm (0.40 inch) LED seven segment displays are Broadcom's most space-efficient character size. They are designed for viewing distances up to 4.5 metres (15 feet). These devices use an industry standard size package and pinout.The single numeric device feature a right hand decimal point.This is

封装/外壳：10-DIP（0.300"，7.62mm） 包装：管件 描述：DISPLAY 7-SEG 0.4\ 光电器件 显示器模块 - LED 字符与数字

10 mm (0.40 inch) Seven Segment Displays Single and dual digits

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10 mm (0.4 inch) Seven Segment Displays

The 10 mm (0.40 inch) LED seven segment displays are Broadcom's most space-efficient character size. They are designed for viewing distances up to 4.5 metres (15 feet). These devices use an industry standard size package and pinout.The single numeric device feature a right hand decimal point.This is

10 mm (0.40 inch) Seven Segment Displays Single and dual digits

文件：293.15 Kbytes Page：11 Pages

10 mm (0.40 inch) Seven Segment Displays

文件：482.53 Kbytes Page：11 Pages

10 mm (0.40 inch) Seven Segment Displays

文件：482.53 Kbytes Page：11 Pages

封装/外壳：10-DIP（0.300"，7.62mm） 包装：散装 描述：LED 光电器件 显示器模块 - LED 字符与数字

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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