4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP. Features • Single 5 V supply • Access time: 55/70 ns

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil

Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628512CI Series offers low power standby po