位置:首页 > IC中文资料 > HD313

型号 功能描述 生产厂家 企业 LOGO 操作
HD313

NPN SILICON TRANSISTOR

APPLICATIONS Low Frequency Power Amplifier.

HUASHAN

华汕电子器件

HD313

通用晶体管

HUASHAN

华汕电子器件

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

MOTOROLA

摩托罗拉

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

NTE

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

PANASONIC

松下

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

HD313产品属性

  • 类型

    描述

  • PC(W):

    30.00

  • IC(A):

    3.00

  • BVcbo(V):

    60.00

  • BVceo(V):

    60.00

  • HFE_MIN:

    60.00

  • HFE_MAX:

    320.00

  • Vces(V):

    1.00

  • fT(MHz):

    8(TYP)

  • 管脚排列PINARRAY:

    BCE

  • 替代型号EQUIVALENTTYPE:

    2SD313

HD313数据表相关新闻