Dual 4-input NAND Gate

FEATURES ● Quiescent Current = 0.5nA typ/pkg @ 5V ● Noise Immunity = 45 of VDD typ ● Capable of Driving One Low-power Schottky TTL Load Over the Rated Temperature Range ● Pin-for Pin Replacements for CD4012B and MC14012B Series

Dual 4-input NAND Gate

Dual 4-input NAND Gate

FEATURES ● Quiescent Current = 0.5nA typ/pkg @ 5V ● Noise Immunity = 45 of VDD typ ● Capable of Driving One Low-power Schottky TTL Load Over the Rated Temperature Range ● Pin-for Pin Replacements for CD4012B and MC14012B Series

Dual 4-input NAND Gate

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

CMOS NAND Gates

Dual 4-Input NOR(NAND) Gate

Dual 4-Input NOR(NAND) Gate

CMOS NAND GATES

CMOS NAND GATES

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

NAND GATES

NAND GATES

Dual 4-input NAND gate

Dual 4-input NAND gate

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates

B−Suffix Series CMOS Gates

COMPLEMENTARY METAL OXIDE SILICON

INPUT NAND GATE

C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC