Octal 3-State Noninverting Bus Transceiver

Octal 3-State Noninverting Bus Transceiver High-Performance Silicon-Gate CMOS The SL74HC245 is identical in pinout to the LS/ALS245. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs. The SL74HC245 is a 3-state noninv

Octal 3-State Noninverting Bus Transceiver

丝印代码：HC245M；CDx4HC(T)245 High-Speed CMOS Logic Octal-Bus Transceiver, Three-State, Non- Inverting

1 Features • Buffered inputs • Three-state outputs • Bus line driving capability • Typical propagation delay (A to B, B to A) 9ns at VCC = 5V, CL = 15pF, TA = 25°C • Fanout (over temperature range) – Bus driver outputs :15 LSTTL loads • Wide operating temperature range : -55°C to 125°C •

丝印代码：HC245M；CDx4HC(T)245 High-Speed CMOS Logic Octal-Bus Transceiver, Three-State, Non- Inverting

1 Features • Buffered inputs • Three-state outputs • Bus line driving capability • Typical propagation delay (A to B, B to A) 9ns at VCC = 5V, CL = 15pF, TA = 25°C • Fanout (over temperature range) – Bus driver outputs :15 LSTTL loads • Wide operating temperature range : -55°C to 125°C •

丝印代码：HC245M；CDx4HC(T)245 High-Speed CMOS Logic Octal-Bus Transceiver, Three-State, Non- Inverting

1 Features • Buffered inputs • Three-state outputs • Bus line driving capability • Typical propagation delay (A to B, B to A) 9ns at VCC = 5V, CL = 15pF, TA = 25°C • Fanout (over temperature range) – Bus driver outputs :15 LSTTL loads • Wide operating temperature range : -55°C to 125°C •

Octal 3-State Noninverting Bus Transceiver

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NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

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N-channel silicon field-effect transistors

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VHF power MOS transistor

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