HAF2011价格

参考价格:¥3.2500

型号:HAF2011-90STR-E 品牌:RENESAS 备注:这里有HAF2011多少钱,2025年最近7天走势,今日出价,今日竞价,HAF2011批发/采购报价,HAF2011行情走势销售排行榜,HAF2011报价。
型号 功能描述 生产厂家 企业 LOGO 操作
HAF2011

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

Silicon N Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

RENESAS

瑞萨

HAF2011

Silicon N Channel MOS FET Series Power Switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

RENESAS

瑞萨

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

RENESAS

瑞萨

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET Series Power Switching

文件:137 Kbytes Page:11 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET Series Power Switching

RENESAS

瑞萨

Intelligent Power Devices

RENESAS

瑞萨

2011 Series - Fast Acting GDT Surge Arrestor with FLAT® Technology

Features ■ Bourns® FLAT® GDT technology ■ Improved impulse performance ■ Flexible mounting options ■ Stable breakdown throughout life ■ Volume- and space-saving design ■ UL Recognized ■ RoHS compliant* and halogen free** Applications ■ Telecommunications ■ Industrial Communications ■

Bourns

伯恩斯

Snap Bushings

文件:133.28 Kbytes Page:1 Pages

Heyco

Crimp Information Sheet

文件:149.57 Kbytes Page:12 Pages

APTIV

安波福

Crimp Information Sheet

文件:149.57 Kbytes Page:12 Pages

APTIV

安波福

INTEGRAL ELECTRONICS (IEPE) PIEZOELECTRIC ACCELEROMETER

文件:50.54 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HAF2011产品属性

  • 类型

    描述

  • 型号

    HAF2011

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N Channel MOS FET Series Power Switching

更新时间:2025-11-23 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2511
TO-263
3809
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS/瑞萨
23+
TO263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
RENESAS
23+
TO-263
71103
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS/瑞萨
23+
TO263
50000
全新原装正品现货,支持订货
RENESAS瑞萨/HITACHI日立
24+
TO-263
7200
新进库存/原装
RENESAS/瑞萨
22+
TO263
8000
原装正品支持实单
RENESAS/瑞萨
24+
TO-263
23000
只做正品原装现货
RENESAS/瑞萨
24+
TO-263
8600
正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐
RENESAS/瑞萨
25+
TO-263
8800
公司只做原装,详情请咨询
RENESAS/瑞萨
24+
TO-263
16900
原装正品现货支持实单

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