位置:HAF2011L > HAF2011L详情

HAF2011L中文资料

厂家型号

HAF2011L

文件大小

121.97Kbytes

页面数量

9

功能描述

Silicon N Channel MOS FET Series Power Switching

数据手册

下载地址一下载地址二到原厂下载

生产厂商

RENESAS

HAF2011L数据手册规格书PDF详情

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built-in the over temperature shut-down circuit

• Latch type shut-down operation (Need 0 voltage recovery)

HAF2011L产品属性

  • 类型

    描述

  • 型号

    HAF2011L

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N Channel MOS FET Series Power Switching

更新时间:2025-12-12 14:16:00
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