NPN EPITAXIAL PLANAR TRANSISTOR

Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S

TO-92 Bipolar Transistor

NPN EPITAXIAL PLANAR TRANSISTOR

Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S

TO-92 Bipolar Transistor

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

1.5A MOTOR DRIVER WITH BRAKE FUNCTION

文件：274.13 Kbytes Page：8 Pages

QPSK transmitter

文件：125.43 Kbytes Page：28 Pages

TDA8046H

文件：127.21 Kbytes Page：24 Pages