丝印代码：HA158；QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) description/ordering information These quadruple 2-line to 1-line data s

丝印代码：HA158；QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) description/ordering information These quadruple 2-line to 1-line data s

丝印代码：HA158；QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) description/ordering information These quadruple 2-line to 1-line data s

丝印代码：HA158；QUADRUPLE 2-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS

Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) description/ordering information These quadruple 2-line to 1-line data s

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

文件：1.0094 Mbytes Page：25 Pages