位置：首页 > IC中文资料第9898页 > H7N1004
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)=25 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 |   | ||
Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance RDS(on)= 25 mΩt yp. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET HigH-Speed Power Switching Features Low on-resistance RDS(on)= 25 mΩ typ. Low drive current Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET HigH-Speed Power Switching Features • Low on-resistance • RDS(on)= 25 mΩtyp. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance • RDS(on)= 25 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance • RDS(on)= 25 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Power MOSFETs and IGBT for PDP
| RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance • RDS(on)= 25 mΩ typ. • Low drive current • Available for 4.5 V gate drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：129.539 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching 文件：137.06 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching 文件：94.68 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching 文件：94.68 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching 文件：126.36 Kbytes Page：14 Pages | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET High-Speed Power Switching 文件：98.61 Kbytes Page：12 Pages | RENESAS 瑞萨 | |
H7N1004产品属性
- 类型
描述
- 型号
H7N1004
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
VBsemi/台湾微碧 |
22+ |
TO263 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS |
24+ |
TO-251 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
21+ |
TO-251 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
TO-251 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
VBSEMI/台湾微碧 |
24+ |
TO263 |
60000 |
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DdatasheetPDF页码索引
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