丝印代码：H649A；GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 3 - 6 GHz

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SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Description Low frequency power amplifier complementary pair with HSD669A. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature............................................................................................ -55 ~ +150 °C Junction Tempera

通用晶体管

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2500 V Mean forward current 4645 A Surge current 45 kA

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■ Features ● High reverse voltage VR ● Low forward voltage VF ● Fast reverse recovery time trr

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters