NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A

NPN Low Saturation Transistor

NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

NPN Silicon Planar High Performance Transistor

■ Features ● Collector Current Capability IC=3A ● Collector Emitter Voltage VCEO=25V ● Low saturation voltage ● Complementary to FZT749

SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Features • BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat)

25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Features • BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat)

NPN Low Saturation Transistor

NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

NPN 低饱和晶体管

这些器件设计为具有高电流增益和低饱和电压，连续集电极电流最高可达3A。

NPN, 25V, 3A, SOT223

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 25V 3A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Features • BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat)

25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Features • BVCEO > 25V • IC = 3A High Continuous Current • ICM = 8A Peak Pulse Current • Low Saturation Voltage VCE(sat)

PNP Transistors

文件：1.0773 Mbytes Page：2 Pages

25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

文件：500.83 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 25V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2500 V Mean forward current 4645 A Surge current 45 kA

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■ Features ● High reverse voltage VR ● Low forward voltage VF ● Fast reverse recovery time trr

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters