NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

NPN Silicon Darlington Transistors

Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Silicon NPN Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

PNP SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain : hFE= 750(Min) @IC= 3A • Low Saturation Voltage • Complement to Type BD650 APPLICATIONS • Designed for use as complementary AF push-pull output stage applications

NPN SILICON POWER DARLINGTONS

Trans Darlington NPN 100V 8A 3-Pin(3+Tab) TO-220

Transistor

SILICON DARLINGTON POWER TRANSISTORS

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NPN SILICON POWER DARLINGTONS

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40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit

Features ◼ Single Power Supply Input (Rated Voltage of 40 V) ◼ Rated Output Current: 3.5 A ◼ Rated Output Current (Peak): 6.0 A ◼ Low ON Resistance DMOS Output ◼ Forward, Reverse, Brake, Open Function ◼ Direct PWM Control ◼ PWM Constant Current Control (Current Limit Function) ◼ Built-in

丝印代码：D64950；40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit

Features ◼ Single Power Supply Input (Rated Voltage of 40 V) ◼ Rated Output Current: 3.5 A ◼ Rated Output Current (Peak): 6.0 A ◼ Low ON Resistance DMOS Output ◼ Forward, Reverse, Brake, Open Function ◼ Direct PWM Control ◼ PWM Constant Current Control (Current Limit Function) ◼ Built-in

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

isc Silicon NPN Darlington Power Transistor

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封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 2500 V Mean forward current 4645 A Surge current 45 kA

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■ Features ● High reverse voltage VR ● Low forward voltage VF ● Fast reverse recovery time trr

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt APPLICATIONS * Motor driver * DC-DC converters