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BD649晶体管资料
BD649别名:BD649三极管、BD649晶体管、BD649晶体三极管
BD649生产厂家:德国AEG公司_德国西门子AG公司_德国凡尔伏公司
BD649制作材料:Si-N+Darl+Di
BD649性质:低频或音频放大(LF)
BD649封装形式:直插封装
BD649极限工作电压:120V
BD649最大电流允许值:8A
BD649最大工作频率:<1MHZ或未知
BD649引脚数:3
BD649最大耗散功率:62.5W
BD649放大倍数:
BD649图片代号:B-10
BD649vtest:120
BD649htest:999900
- BD649atest:8
BD649wtest:62.5
BD649代换 BD649用什么型号代替:BD701,BD901,BDW73C,BDX33C,BDX53C,FD50B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BD649 | Silicon NPN Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications | SAVANTIC | ||
BD649 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647 | COMSET | ||
BD649 | isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain : hFE= 750(Min) @IC= 3A • Low Saturation Voltage • Complement to Type BD650 APPLICATIONS • Designed for use as complementary AF push-pull output stage applications | ISC 无锡固电 | ||
BD649 | PNP SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON TRANSISTORS | SIEMENS 西门子 | ||
BD649 | NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | Bourns 伯恩斯 | ||
BD649 | NPN SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A | POINN Power Innovations Ltd | ||
BD649 | NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON TRANSISTORS | SIEMENS 西门子 | ||
BD649 | NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | Bourns 伯恩斯 | ||
BD649 | NPN Silicon Darlington Transistors Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
BD649 | SILICON DARLINGTON POWER TRANSISTORS 文件:112.31 Kbytes Page:5 Pages | COMSET | ||
BD649 | NPN SILICON POWER DARLINGTONS 文件:105.89 Kbytes Page:5 Pages | Bourns 伯恩斯 | ||
40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit Features ◼ Single Power Supply Input (Rated Voltage of 40 V) ◼ Rated Output Current: 3.5 A ◼ Rated Output Current (Peak): 6.0 A ◼ Low ON Resistance DMOS Output ◼ Forward, Reverse, Brake, Open Function ◼ Direct PWM Control ◼ PWM Constant Current Control (Current Limit Function) ◼ Built-in | ROHM 罗姆 | |||
40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit Features ◼ Single Power Supply Input (Rated Voltage of 40 V) ◼ Rated Output Current: 3.5 A ◼ Rated Output Current (Peak): 6.0 A ◼ Low ON Resistance DMOS Output ◼ Forward, Reverse, Brake, Open Function ◼ Direct PWM Control ◼ PWM Constant Current Control (Current Limit Function) ◼ Built-in | ROHM 罗姆 | |||
NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A | Bourns 伯恩斯 | |||
isc Silicon NPN Darlington Power Transistor 文件:278.82 Kbytes Page:2 Pages | ISC 无锡固电 | |||
封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
FUSE HOLDER SELECTION GUIDE 文件:258.149 Kbytes Page:4 Pages | Littelfuse 力特 | |||
3M??Novec??649 Engineered Fluid 文件:322.61 Kbytes Page:4 Pages | 3M | |||
MINIATURE FUSEHOLDERS 文件:94.91 Kbytes Page:1 Pages | Littelfuse 力特 | |||
General Purpose Tweezers 文件:3.67611 Mbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
General Purpose Tweezers 文件:3.67611 Mbytes Page:4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |
BD649产品属性
- 类型
描述
- 型号
BD649
- 功能描述
达林顿晶体管 62.5W NPN Silicon
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2119+ |
TO-220 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
25+ |
TO220F |
20300 |
ST/意法原装特价BD649即刻询购立享优惠#长期有货 |
|||
ST |
25+ |
TO-220 |
110 |
原装正品,假一罚十! |
|||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ST |
24+ |
TO-220 |
25000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
POWER |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
|||
POWER |
23+ |
SDM/DIP |
7300 |
专注配单,只做原装进口现货 |
|||
ROHM/罗姆 |
2450+ |
SOP-8 |
9485 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
23+ |
TO-220 |
1 |
||||
ST/意法 |
23+ |
14 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
BD649芯片相关品牌
BD649规格书下载地址
BD649参数引脚图相关
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2013-3-5
DdatasheetPDF页码索引
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