BD649晶体管资料

  • BD649别名:BD649三极管、BD649晶体管、BD649晶体三极管

  • BD649生产厂家:德国AEG公司_德国西门子AG公司_德国凡尔伏公司

  • BD649制作材料:Si-N+Darl+Di

  • BD649性质:低频或音频放大(LF)

  • BD649封装形式:直插封装

  • BD649极限工作电压:120V

  • BD649最大电流允许值:8A

  • BD649最大工作频率:<1MHZ或未知

  • BD649引脚数:3

  • BD649最大耗散功率:62.5W

  • BD649放大倍数

  • BD649图片代号:B-10

  • BD649vtest:120

  • BD649htest:999900

  • BD649atest:8

  • BD649wtest:62.5

  • BD649代换 BD649用什么型号代替:BD701,BD901,BDW73C,BDX33C,BDX53C,FD50B,

型号 功能描述 生产厂家&企业 LOGO 操作
BD649

Silicon NPN Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications

SAVANTIC

BD649

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

COMSET

BD649

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain : hFE= 750(Min) @IC= 3A • Low Saturation Voltage • Complement to Type BD650 APPLICATIONS • Designed for use as complementary AF push-pull output stage applications

ISC

无锡固电

BD649

PNP SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

SIEMENS

西门子

BD649

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

Bourns

伯恩斯

BD649

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

POINN

Power Innovations Ltd

BD649

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

SIEMENS

西门子

BD649

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

Bourns

伯恩斯

BD649

NPN Silicon Darlington Transistors

Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD649

SILICON DARLINGTON POWER TRANSISTORS

文件:112.31 Kbytes Page:5 Pages

COMSET

BD649

NPN SILICON POWER DARLINGTONS

文件:105.89 Kbytes Page:5 Pages

Bourns

伯恩斯

40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit

Features ◼ Single Power Supply Input (Rated Voltage of 40 V) ◼ Rated Output Current: 3.5 A ◼ Rated Output Current (Peak): 6.0 A ◼ Low ON Resistance DMOS Output ◼ Forward, Reverse, Brake, Open Function ◼ Direct PWM Control ◼ PWM Constant Current Control (Current Limit Function) ◼ Built-in

ROHM

罗姆

40 V Withstand Voltage 3.5 A (Peak 6 A) DC Brush Motor Driver with Current Limit

Features ◼ Single Power Supply Input (Rated Voltage of 40 V) ◼ Rated Output Current: 3.5 A ◼ Rated Output Current (Peak): 6.0 A ◼ Low ON Resistance DMOS Output ◼ Forward, Reverse, Brake, Open Function ◼ Direct PWM Control ◼ PWM Constant Current Control (Current Limit Function) ◼ Built-in

ROHM

罗姆

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

Bourns

伯恩斯

isc Silicon NPN Darlington Power Transistor

文件:278.82 Kbytes Page:2 Pages

ISC

无锡固电

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

FUSE HOLDER SELECTION GUIDE

文件:258.149 Kbytes Page:4 Pages

Littelfuse

力特

3M??Novec??649 Engineered Fluid

文件:322.61 Kbytes Page:4 Pages

3M

MINIATURE FUSEHOLDERS

文件:94.91 Kbytes Page:1 Pages

Littelfuse

力特

General Purpose Tweezers

文件:3.67611 Mbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

General Purpose Tweezers

文件:3.67611 Mbytes Page:4 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BD649产品属性

  • 类型

    描述

  • 型号

    BD649

  • 功能描述

    达林顿晶体管 62.5W NPN Silicon

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-8-13 18:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2119+
TO-220
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
25+
TO220F
20300
ST/意法原装特价BD649即刻询购立享优惠#长期有货
ST
25+
TO-220
110
原装正品,假一罚十!
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
ST
24+
TO-220
25000
只做原装正品现货 欢迎来电查询15919825718
POWER
23+
TO-220
25000
专做原装正品,假一罚百!
POWER
23+
SDM/DIP
7300
专注配单,只做原装进口现货
ROHM/罗姆
2450+
SOP-8
9485
只做原装正品现货或订货假一赔十!
FAIRCHILD
23+
TO-220
1
ST/意法
23+
14
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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