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H11F1S价格
参考价格：￥9.8198
型号：H11F1SM 品牌：Fairchild 备注：这里有H11F1S多少钱，2025年最近7天走势，今日出价，今日竞价，H11F1S批发/采购报价，H11F1S行情走势销售排行榜，H11F1S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H11F1S | 封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISOLTR 5.3KV PHOTO FET 6-SMD 隔离器 光隔离器 - 晶体管，光电输出 | ONSEMI 安森美半导体 |   | |
PHOTO FET OPTOCOUPLERS DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
PHOTO FET OPTOCOUPLERS 文件：553.74 Kbytes Page：10 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISOLTR 7.5KV PHOTO FET 6-SMD 隔离器 光隔离器 - 晶体管，光电输出 | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
H11F1S产品属性
- 类型
描述
- 型号
H11F1S
- 功能描述
MOSFET输出光电耦合器 SO-6 ANALOG FET
- RoHS
否
- 制造商
Fairchild Semiconductor
- 每芯片的通道数量
1 Channel
- 输出设备
Photo MOSFET
- 绝缘电压
5000 Vrms
- 最大工作温度
+ 100 C
- 最小工作温度
- 40 C
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
2341 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
25+ |
DIPSOP |
65248 |
百分百原装现货 实单必成 |
|||
FAIRCILD |
22+ |
SOP-6 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD/仙童 |
24+ |
SOP-6 |
2000 |
只做原厂渠道 可追溯货源 |
|||
onsemi(安森美) |
24+ |
SMD-6P |
31277 |
正规渠道,大量现货,只等你来。 |
|||
FSC |
24+ |
SOP-6 |
5000 |
全新原装正品,现货销售 |
|||
FSC |
23+ |
SOP-6 |
20000 |
||||
FAIRCHILD/仙童 |
25+ |
DIPSOP |
15100 |
全新原装正品支持含税 |
|||
FAIRCHILD |
2320+ |
DIP6 |
5000 |
只做原装,特价清货! |
|||
三年内 |
1983 |
只做原装正品 |
H11F1S芯片相关品牌
H11F1S规格书下载地址
H11F1S参数引脚图相关
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H11F1S数据表相关新闻
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可立即发货
2019-9-24
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