PHOTO FET OPTOCOUPLERS

DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and

PHOTO FET OPTOCOUPLERS

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封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP 隔离器 光隔离器 - 晶体管，光电输出

PHOTO FET OPTOCOUPLERS

PHOTON COUPLED BILATERAL ANALOG FET

DESCRIPTION\nThe H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level • Options :-\n   10mm lead spread - add G after part no.\n   Surface mount - add SM after part no.\n   Tape&reel - add SMT&R after part no.\nAs a remote variable resistor\n• ≤100Ω to ≥300MΩ\n• ≥ 99.9% Linearity\n• ≤15 pF Shunt Capacitance\n• ≥100GΩ I/O Isolation ResistanceAs an Analog Signal Swi;

6 引脚 DIP 双向模拟 FET 输出光耦合器

H11FXM系列包含一个砷铝化镓IRED发光二极管，该二极管光学耦合至对称双向硅光电探测器。 探测器与输入端绝缘，功能类似于理想的隔离式FET，设计用于低电平AC和DC模拟信号的无失真控制。 H11FXM系列器件采用双列直插封装。 • 作为一个远程可变电阻：\n• ≤ 100Ω至≥ 300MΩ\n• ≤ 15pF分流电容\n• ≥ 100GΩ I/O隔离电阻作为模拟开关：\n• 极低失调电压\n• 60 Vpk-pk信号能力\n• 无电荷注入或闩锁\n• UL认证（文件编号E90700）;

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

PHOTO FET OPTOCOUPLERS

文件：553.74 Kbytes Page：10 Pages

封装/外壳：6-DIP（0.400"，10.16mm） 包装：管件 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP 隔离器 光隔离器 - 晶体管，光电输出