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H11F1价格
参考价格：￥9.7313
型号：H11F1M 品牌：FAIRCHILD 备注：这里有H11F1多少钱，2025年最近7天走势，今日出价，今日竞价，H11F1批发/采购报价，H11F1行情走势销售排行榜，H11F1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H11F1 | PHOTO FET OPTOCOUPLERS DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and | Fairchild 仙童半导体 |   | |
H11F1 | PHOTO FET OPTOCOUPLERS 文件：553.74 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | |
H11F1 | 封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP 隔离器 光隔离器 - 晶体管，光电输出 | ONSEMI 安森美半导体 | | |
H11F1 | PHOTO FET OPTOCOUPLERS | ONSEMI 安森美半导体 | | |
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | Fairchild 仙童半导体 | | ||
PHOTO FET OPTOCOUPLERS 文件：553.74 Kbytes Page：10 Pages | Fairchild 仙童半导体 | | ||
封装/外壳：6-DIP（0.400"，10.16mm） 包装：管件 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP 隔离器 光隔离器 - 晶体管，光电输出 | ONSEMI 安森美半导体 | | ||
PHOTON COUPLED BILATERAL ANALOG FET | ISOCOM 英国安数光 | | ||
6 引脚 DIP 双向模拟 FET 输出光耦合器 | ONSEMI 安森美半导体 | |
H11F1产品属性
- 类型
描述
- 型号
H11F1
- 功能描述
MOSFET输出光电耦合器 DIP-6 ANALOG FET
- RoHS
否
- 制造商
Fairchild Semiconductor
- 每芯片的通道数量
1 Channel
- 输出设备
Photo MOSFET
- 绝缘电压
5000 Vrms
- 最大工作温度
+ 100 C
- 最小工作温度
- 40 C
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHILD/仙童 |
25+ |
DIP-6 |
64581 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD/仙童 |
专业铁帽 |
DIP |
199 |
原装铁帽专营,代理渠道量大可订货 |
|||
FAIRCILD |
22+ |
DIP-6 |
8000 |
原装正品支持实单 |
|||
FSC |
18+ |
DIP-6 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FAIRCHILD/仙童 |
2025+ |
SOP-6 |
2375 |
原装进口价格优 请找坤融电子! |
|||
A |
24+ |
DIP-6 |
4238 |
||||
ON |
23+ |
DIP6 |
346 |
正规渠道,只有原装! |
|||
Fairchild |
25+ |
16 |
公司优势库存 热卖中!! |
||||
MOT |
DIP-6 |
2050 |
正品原装--自家现货-实单可谈 |
H11F1规格书下载地址
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