位置：首页 > IC中文资料第11754页 > H11F1SR2VM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H11F1SR2VM | Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
H11F1SR2VM | H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
H11F1SR2VM | Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | |
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
H11F1SR2VM产品属性
- 类型
描述
- 型号
H11F1SR2VM
- 制造商
Fairchild Semiconductor Corporation
- 功能描述
6-PIN DIP, FET OUTPUT, VDE, SURFACE MOUNT, T&R - Tape and Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
DIP6 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
FAIRCHILD/仙童 |
25+ |
DIPSOP |
65248 |
百分百原装现货 实单必成 |
|||
FAIRCILD |
22+ |
DIP-6 |
8000 |
原装正品支持实单 |
|||
FAIRCHILDSEMICONDUCTOR |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
FAIRCHILD/仙童 |
25+ |
DIPSOP |
27120 |
全新原装正品支持含税 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
FAIRCHILD/仙童 |
2223+ |
SOP-6 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ONSEMI |
2025+ |
PDIP White |
55740 |
||||
ON |
24+ |
PDIP |
12000 |
现货 |
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H11F1SR2VM规格书下载地址
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DdatasheetPDF页码索引
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