N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

N-Channel Power Field Effect Transistor

Description\nThis high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient desi • Robust High Voltage Termination\n• Avalanc he Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature;

High Voltage MOSFET

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

POWER FIELD EFFECT TRANSISTOR

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Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages