Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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分立式IGBT

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 12A 68W TO263-3-2 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

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High Speed IGBT in NPT-technology

文件：356.49 Kbytes Page：14 Pages

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

文件：1.1957 Mbytes Page：14 Pages

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

IGBT with integrated diode in packages offering space saving advantage

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IGBT with integrated diode in packages offering space saving advantage

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POWER FIELD EFFECT TRANSISTOR

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