| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H06N60F | High Voltage MOSFET | HSMC 华昕 |   | |
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode •75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh | INFINEON 英飞凌 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件：278.56 Kbytes Page：13 Pages | INFINEON 英飞凌 | | ||
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件：278.56 Kbytes Page：13 Pages | INFINEON 英飞凌 | |
H06N60F产品属性
- 类型
描述
- Channel：
N
- VDSS(V)：
600
- ID(A)：
6
- VGS(V)：
±30
- RDS(on)Max.(ohm)：
1.2
- RDS(on)@VGS(V)：
10
- RDS(on)@ID(A)：
3.6
- RoHS(Note1)：
PF
- Status(Note2)：
M
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO2203 |
28 |
|||||
N/A |
2402+ |
TO2203 |
8324 |
原装正品!实单价优! |
|||
02+ |
TO220/3 |
28 |
原装现货海量库存欢迎咨询 |
||||
H |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
华昕 |
23+ |
TO220F |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
H |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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