| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H04N60F | N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl | HSMC 华昕 |   | |
H04N60F | High Voltage MOSFET | HSMC 华昕 | | |
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | | ||
POWER MOSFET 文件：329.86 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
H04N60F产品属性
- 类型
描述
- Channel：
N
- VDSS(V)：
600
- ID(A)：
4
- VGS(V)：
±30
- RDS(on)Max.(ohm)：
2.2
- RDS(on)@VGS(V)：
10
- RDS(on)@ID(A)：
2
- RoHS(Note1)：
PF
- Status(Note2)：
M
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
华昕 |
99+ |
TO-220-3 |
150 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
华昕 |
26+ |
TO-220F |
59630 |
主营原装MOS 二三级管 肖特基 功率场效应管 |
|||
TOSHIBA |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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