256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

256K x 36/512K x 18 Pipelined SRAM

CMOS Static RAM 256K (32K x 8-Bit)

Features ◆ 32K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options ◆ Equal access and cycle times – Commercial: 12ns – Commercial and Industrial: 15/20/25ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inp

CMOS STATIC RAM 256K (32K x 8-BIT)

DESCRIPTION: The IDT71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high performance, high-reliability CMOS technology. FEATURES: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.)

CMOS STATIC RAM 256K (32K x 8-BIT)

Description The IDT71256SA is a 262,144-bit high-speed Static RAM organized as 32K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

CMOS STATIC RAM 256K (32K x 8-BIT)

DESCRIPTION: The IDT71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high performance, high-reliability CMOS technology. FEATURES: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.)

CMOS Static RAM 256K (32K x 8-Bit)

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