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位置：首页 > IC中文资料第9878页 > GVT71256C36

型号 功能描述 生产厂家 企业 LOGO 操作
GVT71256C36

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36

256K x 36/512K x 18 Pipelined SRAM

INFINEON

英飞凌

GVT71256C36B-4.4

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36B-5

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36B-6

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36B-6.7

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36T-4.4

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36T-5

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36T-6

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36T-6.7

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36TA-4.4

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36TA-5

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36TA-6

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36TA-6.7

256K x 36/512K x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast access times: 2.5 ns

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

GVT71256C36产品属性

  • 类型

    描述

  • 型号

    GVT71256C36

  • 制造商

    CYPRESS

  • 制造商全称

    Cypress Semiconductor

  • 功能描述

    256K x 36/512K x 18 Pipelined SRAM

GVT71256C36供应商更多...

更新时间：2026-3-2 18:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市英卓尔科技有限公司
GVT71256E18T-7
20+
TQFP 100
500
样品可出,优势库存欢迎实单
询价
深圳市联世界科技有限公司
GVT71256D36TA-6
GVT
24+/25+
387
原装正品现货库存价优
询价
深圳市明嘉莱科技有限公司
GVT71256D36TA-6
GALVANTEC
25+
QFP
860000
明嘉莱只做原装正品现货
询价
深圳市富芯乐电子科技有限公司
GVT71256E18T-19
GALVANTECH
24+
NA
3600
只做原装正品现货 欢迎来电查询15919825718
询价
深圳市振宏微科技有限公司
GVT71256D36TA5
23+
原厂封装
11888
专做原装正品,假一罚百!
询价
深圳市福田区绿盛电子商行
GVT71256D36TA-6
GVT
2015+
SMD/DIP
19889
一级代理原装现货,特价热卖!
询价
深圳市欧立现代科技有限公司
GVT71256E18T-9
GVT
24+
QFP
6980
原装现货,可开13%税票
询价
深圳市恒达亿科技有限公司
GVT71256E18T-9
GVT
25+
QFP
4500
全新原装、诚信经营、公司现货销售
询价
深圳市毅创腾电子科技有限公司
GVT71256E18T-9
GVT
23+
QFP
2500
绝对全新原装!现货!特价!请放心订购!
询价
深圳市一线半导体有限公司
GVT71256E18T-7
GALVANTECH
24+
TQFP-100P
75
询价

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