Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

Thermally-Enhanced High Power RF GaN HEMT

文件：858.6 Kbytes Page：4 Pages

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz

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Thermally-Enhanced High Power RF GaN HEMT

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz

Description The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

Thermally-Enhanced High Power RF GaN HEMT

文件：858.6 Kbytes Page：4 Pages

High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz

Cellular (2300 MHz to 2700 MHz)

包装：带 描述：GAN SIC 分立半导体产品 晶体管 - FET，MOSFET - 射频

包装：带 描述：GAN SIC 分立半导体产品 晶体管 - FET，MOSFET - 射频