Description

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and

a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input Matched

• Typical CW performance, 2690 MHz, 48 V, single side

- Output power at P3dB = 170 W

- Efficiency = 75

- Gain = 15 dB

• Human Body Model, Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @48 V, 40 W (CW)

output power

• RoHS-compliant