CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor28(7/36)AWGSilverPlatedCopper0.015 b)Insulation0.010Wall,Nom.PTFE0.035+/-0.004 (1)Color(s) WHITE,BLACK,RED,GREEN,YELLOW,BLUE,BROWN ORANGE,GRAY,VIOLET,WHITE/BLACK,WHITE/BLUE WHITE/ORANGE,WHITE/VIOLET

IntroductiontoKnowlesPrecisionDevices

Applications RFamplifier LCFiltersandNetworks BroadbandWirelessLAN MedicalDevices CordlessandCellularphones DR/CrystalOscillator Microstriplinefilters

MOSFET:P-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode

MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypecontainingaP-ChannelMOSFET(MCH3312)andaSchottkyBarrierDiode(SB1003M3),facilitatinghigh-densitymounting. •[MOS] •LowON-resistance •Ultrahigh-speedswitching •4Vdrive •[SBD]

PowerMOSFET(Vdss=20V)

Description TheseN-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ThisDua

CustomerSpecification

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