Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications The 4th Generation • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs) • Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC =

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.3V@IC=10A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Frequency Converters ·Air Conditioning ·UPS,PFC ·Motor Drives

IGBT for soft switching applications

封装/外壳：TO-3PL 包装：管件 描述：IGBT 1000V 60A 170W TO3P LH 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

High Power Switching Applications The 4th Generation • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs) • Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC =