High Power Switching Applications

The 4th Generation

• FRD included between emitter and collector

• Enhancement-mode

• High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A)

FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs)

• Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)