GT03价格

参考价格:¥10.0416

型号:GT03-111-034-B 品牌:ICEComponents 备注:这里有GT03多少钱,2025年最近7天走势,今日出价,今日竞价,GT03批发/采购报价,GT03行情走势销售排行榜,GT03报价。
型号 功能描述 生产厂家 企业 LOGO 操作
GT03

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

GT03

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

GT03

温补晶振TCXO

ETC

知名厂家

FOR USE BY BOMBARDIER & BOMBARDIER’S SUBCONTRACTORS

Features: • Quick positive coupling • Audible, tactile and visual indication of full coupling • Waterproof • No lockwiring required • High shock and vibration capabilities • Inserts are made from low smoke/flame retardant or Neoprene • Operating temperature range: –55°C to +125°C • Avai

AMPHENOL

安费诺

N-Channel Enhancement Mode Power MOSFET

Description The GT030N08D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT030N08D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT030N08M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

FOR USE BY BOMBARDIER & BOMBARDIER’S SUBCONTRACTORS

Features: • Quick positive coupling • Audible, tactile and visual indication of full coupling • Waterproof • No lockwiring required • High shock and vibration capabilities • Inserts are made from low smoke/flame retardant or Neoprene • Operating temperature range: –55°C to +125°C • Avai

AMPHENOL

安费诺

N-Channel Enhancement Mode Power MOSFET

Description The GT035N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N12M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N12T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT035N12TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The GT038P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Programmable Display for Harsh Environments in a Compact 3.5in Body

文件:204.04 Kbytes Page:1 Pages

Panasonic

松下

包装:散装 描述:HYBRID 23 STEP MOTOR LOW BACKLAS 电机,电磁阀,螺线管,驱动器板/模块 步进电机

NMB

美蓓亚三美

80V N Channel SGT MOSFET

GOFORD

谷峰半导体

包装:散装 描述:CONN RCPT MALE 4POS SILVER SCREW 连接器,互连器件 圆形连接器组件

ETC

知名厂家

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:147.92 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

Gate Drive Transformer

文件:240.24 Kbytes Page:1 Pages

ICE

60V N Channel SGT MOSFET

GOFORD

谷峰半导体

GT03产品属性

  • 类型

    描述

  • 型号

    GT03

  • 制造商

    ICE

  • 制造商全称

    ice Components, Ins.

  • 功能描述

    Gate Drive Transformer

更新时间:2025-10-18 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
XX
24+
SOD123
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ICE
14+
SMD8
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ICE
2450+
SMD8
6540
只做原厂原装正品终端客户免费申请样品
AmphenolIndustrial
24+
DIP
17900
环形MIL规格连接器4CONDUCTORRECPT80AMPS4-6AWG
XX
25+23+
SOD123
77237
绝对原装正品现货,全新深圳原装进口现货
24+
QFP
30
LG
09+
8366
公司优势库存 热卖中!
XX/兴芯智能
25+
SOD123
860000
明嘉莱只做原装正品现货
ICE
23+
SOP8
8000
原装正品,假一罚十
XX
19+
SOD123
20000
4800

GT03数据表相关新闻

  • GT17HN-4DP-2DS(C)

    进口代理

    2025-3-26
  • GT24C1024-2GLI

    GT24C1024-2GLI,全新原装.当天发货或门市自取,如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三,V:八七六八零五五八.

    2021-11-27
  • GT50GR22

    GT50GR22 ,当天发货0755-82732291全新原装现货或门市自取.

    2020-8-1
  • GST5009MLF

    GST5009MLF ,全新原装当天发货或门市自取0755-82732291.

    2019-11-25
  • GSP-812

    GSP-812,全新原装当天发货或门市自取0755-82732291.

    2019-4-9
  • GSOT36C-GS08vishayESDSuppressorTVS±30KV原装正品大量现货

    GSOT36C-GS08vishayESDSuppressorTVS±30KV原装正品大量现货

    2019-3-21