位置：首页 > IC中文资料第8121页 > GS8161E32D-250
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GS8161E32D-250 | 1Mx18,512Kx32,512Kx3618MbSyncBurstSRAMs FunctionalDescription Applications TheGS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D)isa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfin | GSI GSI Technology |  |   |
1Mx18,512Kx32,512Kx3618MbSyncBurstSRAMs FunctionalDescription Applications TheGS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D)isa18,874,368-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfin | GSI GSI Technology | | |
GS8161E32D-250产品属性
- 类型
描述
- 型号
GS8161E32D-250
- 制造商
GSI
- 制造商全称
GSI Technology
- 功能描述
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32D-250芯片相关品牌
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特点•低输出阻抗（在VIN=5V，典型的35Ω）•低静态电流（典型值36μA在VIN=5V）•高功率转换效率（典型值98％）•简单而准确的电压转换积极到消极的极性•改进的锁定保护•无需外部二极管应用•-5V电源+5V逻辑电源•EIA/TIA-232E和TIA/EIA-562电源•便携式电话̶
2012-12-27GS6332-3引脚，低功率，P复位电路
•GS6333和GS6332系统监控电路旨在监视VCC和数字系统中提供一个复位信号到主机的处理器在必要时。无外部元件。•当处理器的电源电压下降到低于复位阈值，复位输出驱动为有效，小于40μs（TD1）。为复位保持活跃一段时间（TD2），高于该阈值后的VCC上升电压。•为了防止抖动，复位阈值电压有一个内置的滞后的Vth为0.4％。•GS6333具有低电平有效的复位输出，而GS6332具有高有效的复位输出。这两款器件有推/拉输出驱动。•复位信号是保证有效，VCC=1.0V。
2012-11-21
DdatasheetPDF页码索引
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