1000 BASE-T MAGNETICS MODULES

General Specification • Designed for long haul Gigabit Ethernet 1000 Base-T, Full Duplex applications • Supports category 5 UTP cable • Low common mode Emissions • Compliant with IEEE 802.3ab standard for 1000 Base-T • Storage temperature range: -40℃ to +125℃ .

1000 BASE -T DUAL PORT MAGNETICS MODULES

General Specification • Designed for long haul Gigabit Ethernet 1000 Base-T, Full Duplex applications • Supports category 5 UTP cable • Low common mode Emissions • Compliant with IEEE 802.3ab standard for 1000 Base-T • Storage temperature range: -40℃ to +125℃ .

LAN Magnetic Transformers & Filters

1000 BASE-T DUAL PORT MAGNETICS MODULES

文件：514.28 Kbytes Page：2 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package