GRM188R60J106价格

参考价格:¥0.0631

型号:GRM188R60J106KE47D 品牌:Murata Electronics 备注:这里有GRM188R60J106多少钱,2024年最近7天走势,今日出价,今日竞价,GRM188R60J106批发/采购报价,GRM188R60J106行情走势销售排行榜,GRM188R60J106报价。
型号 功能描述 生产厂家&企业 LOGO 操作
GRM188R60J106

Dual3MHz,800mABuckRegulatorswithTwo300mALDOs

GENERALDESCRIPTION TheADP5037combinestwohighperformancebuckregulatorsandtwolowdropout(LDO)regulatorsinasmall,24-lead4mm×4mmLFCSPtomeetdemandingperformanceandboardspacerequirements. Thehighswitchingfrequencyofthebuckregulatorsenablestinymultilayerexterna

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
GRM188R60J106

MicroPMUwith1.2ABuckRegulator

GENERALDESCRIPTION TheADP5040combinesonehighperformancebuckregulatorandtwolowdropoutregulators(LDO)inasmall20-leadLFCSPtomeetdemandingperformanceandboardspacerequirements. Thehighswitchingfrequencyofthebuckregulatorenablestheuseoftinymultilayerexternalco

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
GRM188R60J106

Dual3MHz,1200mABuck

GENERALDESCRIPTION TheADP5024combinestwohighperformancebuckregulatorsandonelowdropout(LDO)regulatorinasmall,24-lead,4mm×4mmLFCSPtomeetdemandingperformanceandboardspacerequirements. Thehighswitchingfrequencyofthebuckregulatorsenablestinymultilayerexterna

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312BVisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312Bisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorrep

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

CeramicCapacitors(SMD)

Specifications 180mmPaperTape 330mmPaperTape

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

MURATA1

IdealforMulti-CarrierSystems

FEATURES IdealforMulti-CarrierSystems LowsideorHighsideLO 11.8dBGain Ultralinear+43dBmIP3OusingHSLOor +37.5dBmIP3OusingLSLO 9.7dBNF 200Ωoutputimpedance Wideflat-performanceIFBW DrivesADCdirectlyforDPDapplications LowPowerConsumption 5

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IdealforMulti-CarrierSystems

FEATURES IdealforMulti-CarrierSystems LowsideorHighsideLO 11.7dBGain Ultralinear+45dBmIP3OusingHSLOor +42dBmIP3OusingLSLO 9.7dBNF 200Ωoutputimpedance WideflatperformanceIFBW DrivesADCdirectlyforDPDapplications LowPowerConsumption 5x5

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CeramicCapacitors(SMD)

Specifications 180mmPaperTape 330mmPaperTape

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

MURATA1

SystempowerIC

2.Features •AVCCinputvoltagerange:4.5Vto5.5V •DCDCconverter(CH1andCH2) Powervoltage range Outputvoltage (*1)Outputcurrent CH13.6Vto5.5V1.05V2A CH24.3Vto5.5V3.3V2A 4.0Vto5.5V3.3V300mA SynchronousCurrentModeBuckConverters Outputcurrent2Aandmore

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

DPDDemodulatorforPALinearization,1300MHzto2900MHz

FEATURES(IORQPATH) •WideflatperformanceIFBW •WideRFandLOBWs(~1.6GHz) •IdealforMulti-CarrierSystems •DrivesADCdirectly •Ultralinear+41dBmIP3O •LowNoiseFigure •ExcellentACLRperformance •200Ωoutputimpedance •FullyintegratedDPDdemodulator •6x636pin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CHIPMONOLITHICCERAMICCAPACITOR

GRMseries/Hi-Cap(1uFandover) Features 1.TAchipcapacitorreplacementproductlineupisavailableinX7R(X7S,X7T,X7U),X6S(X6T)andX5Rtemperaturecharacteristicswithacapacitanceof1uFandlarger. 2.Thelineofhighvolumetriccapacitanceceramicchipcapacitorsisavailablein

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

MuRata

WideInputandUltra-LowQuiescentCurrentBoostConverterwithHighEfficiency

GeneralDescription TheRT4823integratesbuilt-inpowertransistors, synchronousrectification,andlowsupplycurrentto provideacompactsolutionforsystemsusingadvanced Li-Ionbatterychemistries.TheRT4823iscapableof supplyingsignificantenergywhenthebatteryvoltageis lower

RichTekRichtek USA Inc.

台湾立绮立绮科技

RichTek

CeramicCapacitors(SMD)

Specifications 180mmPaperTape 330mmPaperTape

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

MURATA1

ChipMonolithicCeramicCapacitorforGeneral

文件:789.35 Kbytes Page:29 Pages

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

MuRata

封装/外壳:0603(1608 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 10UF 6.3V X5R 0603 电容器 陶瓷电容器

Murata Electronics

Murata Electronics

Murata Electronics

封装/外壳:0603(1608 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER MLCC 电容器 陶瓷电容器

Murata Electronics

Murata Electronics

Murata Electronics

4AProcessorSupplywithI2CCompatibleInterfaceandRemoteSense

文件:4.78077 Mbytes Page:48 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

RFtoIFDualDownconvertingMixer

文件:4.37791 Mbytes Page:21 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3-MHz2-AStep-DownConverterin2-mm횞2-mmSONPackage

文件:1.27905 Mbytes Page:27 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

3-MHz2-AStep-DownConverterin2-mmx2-mmSONPackage

文件:1.28822 Mbytes Page:27 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

TXDifferentialInputRFAmplifier

文件:2.6636 Mbytes Page:26 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

1.2AHighEfficientStepDownConverterin2x2mmSONPackage

文件:786.82 Kbytes Page:22 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

ChipMonolithicCeramicCapacitor0603X5R10關F6.3V

文件:64.25 Kbytes Page:1 Pages

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

MuRata

3-MHz2AStepDownConverterin2x2SONPackage

文件:1.14829 Mbytes Page:25 Pages

TITexas Instruments

德州仪器美国德州仪器公司

TI

USB-CompliantSingle-CellLi-IonSwitchingChargerwithUSB-OTGBoostfor200mAto1.45ASystems

文件:4.7145 Mbytes Page:32 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HighEfficiency,1.55A,Li-IonSwitchingChargerwithIntegratedPowerPath,USB-OTG,inaSmallSolutionSize

文件:1.12753 Mbytes Page:38 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

3.2ADualInput,SwitchModeChargerwithPowerPath

文件:6.84104 Mbytes Page:61 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

TPS639001.8-Vto5.5-V,400-mA,200-nAQuiescentCurrentBuck-BoostConverter

文件:1.76417 Mbytes Page:31 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

High-performanceclass-GstereoheadphoneamplifierwithI2Cvolumecontrol

文件:2.40998 Mbytes Page:48 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

ChipMultilayerCeramicCapacitorsforGeneralPurpose

文件:778.06 Kbytes Page:30 Pages

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

MuRata

3MHz,2ASynchronousBuckConverter

文件:293.53 Kbytes Page:16 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RFtoIFDualDownconvertingMixer

文件:1.64167 Mbytes Page:26 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

DPDDemodulatorforPALinearization

文件:1.35661 Mbytes Page:25 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

DPDDemodulatorforPALinearization

文件:1.86157 Mbytes Page:28 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

RFtoIFDualDownconvertingMixer

文件:4.99036 Mbytes Page:26 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

DRV2603ERM/LRAHapticDriverEvaluationKit

文件:1.28762 Mbytes Page:28 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

400MHz??2700MHz13dBtypicalmaxgain

文件:2.15292 Mbytes Page:28 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

RFtoIFSingleDownconvertingMixer

文件:1.19467 Mbytes Page:24 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

RFtoIFSingleDownconvertingMixer

文件:1.05529 Mbytes Page:24 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

Buck-boostDC-DCconverter

文件:1.44573 Mbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

MatchedBroadbandRFVGA

文件:2.03924 Mbytes Page:27 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

LAUNCHXL-F28379DOverview

文件:1.13333 Mbytes Page:30 Pages

TITexas Instruments

德州仪器美国德州仪器公司

TI

High-performanceclass-GstereoheadphoneamplifierwithI2Cvolumecontrol

文件:2.40998 Mbytes Page:48 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4MHz,2A,100DutyCycleBuckRegulatorwithHyperLightLoad짰andPowerGood

文件:1.10673 Mbytes Page:19 Pages

MicrelMicrel Semiconductor

麦瑞半导体麦克雷尔|麦瑞半导体

Micrel

LOWINPUTVOLTAGESTEP-UPCONVERTERINTHINSOT-23PACKAGE

文件:1.50286 Mbytes Page:20 Pages

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1

GRM188R60J106产品属性

  • 类型

    描述

  • 型号

    GRM188R60J106

  • 制造商

    TI

  • 制造商全称

    Texas Instruments

  • 功能描述

    3-MHz 2A Step Down Converter in 2x2 SON Package

更新时间:2024-5-25 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MURATA ELECTRONICS
22+
SMD
518000
明嘉莱只做原装正品现货
MURATA/村田
22+
SMD
47664
郑重承诺只做原装进口货
MURATA
2021+
原厂原封装
93628
原装进口现货 假一罚百
MU4
1342+
0603/6.3V/X5R/10UF/20%
8626
绝对原装优势
EPSMURATA/村田
19+
SMD
900000
优势贴片电容全新原装进口现货欢迎咨询
Murata
0603
200000
MURATA
21+
N/A
8800
公司只做原装正品
muRata/村田
0603
6000
muRata/村田
21+
0603
10000
全新原装现货
muRata/村田
603
6000

GRM188R60J106芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

GRM188R60J106数据表相关新闻

  • GRM21BR61E226ME44L

    原装正品价格优势

    2021-12-7
  • GRM188R72A104KA35D

    GRM188R72A104KA35D

    2021-11-2
  • GRM155R71H104KE14D

    商品屬性屬性值搜尋類似項目 製造商:Murata 產品類型:多層陶瓷電容器MLCC-SMD/SMT RoHS:詳細資料 封裝:CutTape 封裝:MouseReel 封裝:Reel 終端:Standard 電容:0.1uF 直流電額定電壓:50VDC 電介質:X7R 耐受性:10%_ 外殼代碼-in:0402 外殼代碼-mm:1005 高度:0.5mm

    2021-7-2
  • GRM21BR61H475KE51L

    GRM21BR61H475KE51L

    2021-6-22
  • GRM033R60J225ME47D 电容器 陶瓷电容器

    GRM033R60J225ME47D原装现货供应0755-2889238913713856319QQ:2639752116

    2021-3-12
  • GRM188B31A106KE69D

    EMK325BJ476MM-PTaiyoYuden20+2000001210村田原装现货 GRM033R61A104KE84DmuRata20+2000000201村田原装现货 GRM188B31A106KE69DmuRata20+2000000603村田原装现货 GRM31CB31A476ME15LmuRata20+2000001206村田原装现货 JMK212BBJ226MGHTTaiyoYuden20+2000000805村田原装现货 LMK316B7226KL-TRTaiyoYuden20+2000001206

    2020-9-23