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GRM188R60J106价格
参考价格:¥0.0631
型号:GRM188R60J106KE47D 品牌:Murata Electronics 备注:这里有GRM188R60J106多少钱,2024年最近7天走势,今日出价,今日竞价,GRM188R60J106批发/采购报价,GRM188R60J106行情走势销售排行榜,GRM188R60J106报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
GRM188R60J106 | Dual3MHz,800mABuckRegulatorswithTwo300mALDOs GENERALDESCRIPTION TheADP5037combinestwohighperformancebuckregulatorsandtwolowdropout(LDO)regulatorsinasmall,24-lead4mm×4mmLFCSPtomeetdemandingperformanceandboardspacerequirements. Thehighswitchingfrequencyofthebuckregulatorsenablestinymultilayerexterna | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | ||
GRM188R60J106 | MicroPMUwith1.2ABuckRegulator GENERALDESCRIPTION TheADP5040combinesonehighperformancebuckregulatorandtwolowdropoutregulators(LDO)inasmall20-leadLFCSPtomeetdemandingperformanceandboardspacerequirements. Thehighswitchingfrequencyofthebuckregulatorenablestheuseoftinymultilayerexternalco | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | ||
GRM188R60J106 | Dual3MHz,1200mABuck GENERALDESCRIPTION TheADP5024combinestwohighperformancebuckregulatorsandonelowdropout(LDO)regulatorinasmall,24-lead,4mm×4mmLFCSPtomeetdemandingperformanceandboardspacerequirements. Thehighswitchingfrequencyofthebuckregulatorsenablestinymultilayerexterna | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | ||
HeterojunctionBipolarTransistorTechnology(InGaPHBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312BVisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
HeterojunctionBipolarTransistorTechnology(InGaPHBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312Bisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorrep | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
CeramicCapacitors(SMD) Specifications 180mmPaperTape 330mmPaperTape | MURATA1Murata Manufacturing Co., Ltd 村田村田制作所 | |||
IdealforMulti-CarrierSystems FEATURES IdealforMulti-CarrierSystems LowsideorHighsideLO 11.8dBGain Ultralinear+43dBmIP3OusingHSLOor +37.5dBmIP3OusingLSLO 9.7dBNF 200Ωoutputimpedance Wideflat-performanceIFBW DrivesADCdirectlyforDPDapplications LowPowerConsumption 5 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
IdealforMulti-CarrierSystems FEATURES IdealforMulti-CarrierSystems LowsideorHighsideLO 11.7dBGain Ultralinear+45dBmIP3OusingHSLOor +42dBmIP3OusingLSLO 9.7dBNF 200Ωoutputimpedance WideflatperformanceIFBW DrivesADCdirectlyforDPDapplications LowPowerConsumption 5x5 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CeramicCapacitors(SMD) Specifications 180mmPaperTape 330mmPaperTape | MURATA1Murata Manufacturing Co., Ltd 村田村田制作所 | |||
SystempowerIC 2.Features •AVCCinputvoltagerange:4.5Vto5.5V •DCDCconverter(CH1andCH2) Powervoltage range Outputvoltage (*1)Outputcurrent CH13.6Vto5.5V1.05V2A CH24.3Vto5.5V3.3V2A 4.0Vto5.5V3.3V300mA SynchronousCurrentModeBuckConverters Outputcurrent2Aandmore | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
DPDDemodulatorforPALinearization,1300MHzto2900MHz FEATURES(IORQPATH) •WideflatperformanceIFBW •WideRFandLOBWs(~1.6GHz) •IdealforMulti-CarrierSystems •DrivesADCdirectly •Ultralinear+41dBmIP3O •LowNoiseFigure •ExcellentACLRperformance •200Ωoutputimpedance •FullyintegratedDPDdemodulator •6x636pin | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CHIPMONOLITHICCERAMICCAPACITOR GRMseries/Hi-Cap(1uFandover) Features 1.TAchipcapacitorreplacementproductlineupisavailableinX7R(X7S,X7T,X7U),X6S(X6T)andX5Rtemperaturecharacteristicswithacapacitanceof1uFandlarger. 2.Thelineofhighvolumetriccapacitanceceramicchipcapacitorsisavailablein | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | |||
WideInputandUltra-LowQuiescentCurrentBoostConverterwithHighEfficiency GeneralDescription TheRT4823integratesbuilt-inpowertransistors, synchronousrectification,andlowsupplycurrentto provideacompactsolutionforsystemsusingadvanced Li-Ionbatterychemistries.TheRT4823iscapableof supplyingsignificantenergywhenthebatteryvoltageis lower | RichTekRichtek USA Inc. 台湾立绮立绮科技 | |||
CeramicCapacitors(SMD) Specifications 180mmPaperTape 330mmPaperTape | MURATA1Murata Manufacturing Co., Ltd 村田村田制作所 | |||
ChipMonolithicCeramicCapacitorforGeneral 文件:789.35 Kbytes Page:29 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | |||
封装/外壳:0603(1608 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 10UF 6.3V X5R 0603 电容器 陶瓷电容器 | Murata Electronics Murata Electronics | |||
封装/外壳:0603(1608 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER MLCC 电容器 陶瓷电容器 | Murata Electronics Murata Electronics | |||
4AProcessorSupplywithI2CCompatibleInterfaceandRemoteSense 文件:4.78077 Mbytes Page:48 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
RFtoIFDualDownconvertingMixer 文件:4.37791 Mbytes Page:21 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
3-MHz2-AStep-DownConverterin2-mm횞2-mmSONPackage 文件:1.27905 Mbytes Page:27 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
3-MHz2-AStep-DownConverterin2-mmx2-mmSONPackage 文件:1.28822 Mbytes Page:27 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
TXDifferentialInputRFAmplifier 文件:2.6636 Mbytes Page:26 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
1.2AHighEfficientStepDownConverterin2x2mmSONPackage 文件:786.82 Kbytes Page:22 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
ChipMonolithicCeramicCapacitor0603X5R10關F6.3V 文件:64.25 Kbytes Page:1 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | |||
3-MHz2AStepDownConverterin2x2SONPackage 文件:1.14829 Mbytes Page:25 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | |||
USB-CompliantSingle-CellLi-IonSwitchingChargerwithUSB-OTGBoostfor200mAto1.45ASystems 文件:4.7145 Mbytes Page:32 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HighEfficiency,1.55A,Li-IonSwitchingChargerwithIntegratedPowerPath,USB-OTG,inaSmallSolutionSize 文件:1.12753 Mbytes Page:38 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
3.2ADualInput,SwitchModeChargerwithPowerPath 文件:6.84104 Mbytes Page:61 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
TPS639001.8-Vto5.5-V,400-mA,200-nAQuiescentCurrentBuck-BoostConverter 文件:1.76417 Mbytes Page:31 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
High-performanceclass-GstereoheadphoneamplifierwithI2Cvolumecontrol 文件:2.40998 Mbytes Page:48 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
ChipMultilayerCeramicCapacitorsforGeneralPurpose 文件:778.06 Kbytes Page:30 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | |||
3MHz,2ASynchronousBuckConverter 文件:293.53 Kbytes Page:16 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
RFtoIFDualDownconvertingMixer 文件:1.64167 Mbytes Page:26 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
DPDDemodulatorforPALinearization 文件:1.35661 Mbytes Page:25 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
DPDDemodulatorforPALinearization 文件:1.86157 Mbytes Page:28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
RFtoIFDualDownconvertingMixer 文件:4.99036 Mbytes Page:26 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
DRV2603ERM/LRAHapticDriverEvaluationKit 文件:1.28762 Mbytes Page:28 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
400MHz??2700MHz13dBtypicalmaxgain 文件:2.15292 Mbytes Page:28 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
RFtoIFSingleDownconvertingMixer 文件:1.19467 Mbytes Page:24 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
RFtoIFSingleDownconvertingMixer 文件:1.05529 Mbytes Page:24 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
Buck-boostDC-DCconverter 文件:1.44573 Mbytes Page:20 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
MatchedBroadbandRFVGA 文件:2.03924 Mbytes Page:27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | |||
LAUNCHXL-F28379DOverview 文件:1.13333 Mbytes Page:30 Pages | TITexas Instruments 德州仪器美国德州仪器公司 | |||
High-performanceclass-GstereoheadphoneamplifierwithI2Cvolumecontrol 文件:2.40998 Mbytes Page:48 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
4MHz,2A,100DutyCycleBuckRegulatorwithHyperLightLoad짰andPowerGood 文件:1.10673 Mbytes Page:19 Pages | MicrelMicrel Semiconductor 麦瑞半导体麦克雷尔|麦瑞半导体 | |||
LOWINPUTVOLTAGESTEP-UPCONVERTERINTHINSOT-23PACKAGE 文件:1.50286 Mbytes Page:20 Pages | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) |
GRM188R60J106产品属性
- 类型
描述
- 型号
GRM188R60J106
- 制造商
TI
- 制造商全称
Texas Instruments
- 功能描述
3-MHz 2A Step Down Converter in 2x2 SON Package
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MURATA ELECTRONICS |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
MURATA/村田 |
22+ |
SMD |
47664 |
郑重承诺只做原装进口货 |
|||
MURATA |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
MU4 |
1342+ |
0603/6.3V/X5R/10UF/20% |
8626 |
绝对原装优势 |
|||
EPSMURATA/村田 |
19+ |
SMD |
900000 |
优势贴片电容全新原装进口现货欢迎咨询 |
|||
Murata |
0603 |
200000 |
|||||
MURATA |
21+ |
N/A |
8800 |
公司只做原装正品 |
|||
muRata/村田 |
0603 |
6000 |
|||||
muRata/村田 |
21+ |
0603 |
10000 |
全新原装现货 |
|||
muRata/村田 |
603 |
6000 |
GRM188R60J106规格书下载地址
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GRM188R60J106数据表相关新闻
GRM21BR61E226ME44L
原装正品价格优势
2021-12-7GRM188R72A104KA35D
GRM188R72A104KA35D
2021-11-2GRM155R71H104KE14D
商品屬性屬性值搜尋類似項目 製造商:Murata 產品類型:多層陶瓷電容器MLCC-SMD/SMT RoHS:詳細資料 封裝:CutTape 封裝:MouseReel 封裝:Reel 終端:Standard 電容:0.1uF 直流電額定電壓:50VDC 電介質:X7R 耐受性:10%_ 外殼代碼-in:0402 外殼代碼-mm:1005 高度:0.5mm
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GRM033R60J225ME47D原装现货供应0755-2889238913713856319QQ:2639752116
2021-3-12GRM188B31A106KE69D
EMK325BJ476MM-PTaiyoYuden20+2000001210村田原装现货 GRM033R61A104KE84DmuRata20+2000000201村田原装现货 GRM188B31A106KE69DmuRata20+2000000603村田原装现货 GRM31CB31A476ME15LmuRata20+2000001206村田原装现货 JMK212BBJ226MGHTTaiyoYuden20+2000000805村田原装现货 LMK316B7226KL-TRTaiyoYuden20+2000001206
2020-9-23
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