Linear Gain Block with Bypass 0.15 to 6 GHz

FEATURES Flexible Bias Voltage and Current Process: GaAs pHEMT Single Control Logic Input Internally Matched to 50 Ω Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 80 mA / 1.7 GHz Gain: 15.5 dB OP1dB: 22 dBm OIP3: 38 dBm Evaluation Board Noise Figure: 2.1 dB Bypass Mode Gain: -1.6

High Linearity Gain Blocks

Reference: 5V/80mA/1700MHz\n• Gain: 15.0 dB\n• EVB NF: 2.3 dB\n• OIP3: 39.0 dBm\n• OP1dB: 22.0 dBm\n• Bypass Gain: -2.0 dB\n• Bypass OIP3: 42.5 dBm\n• Bypass OP1dB: 18.5 dBm\n• Single Control Logic Input\n• Flexible Bias Voltage and Current\n• Internally Matched to 50 Ω\n• Process: GaAs pHEMT;

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal in

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

DUAL PRE AMPLIFIER WITH A MUSIC SEARCH FOR AUTO REVERSE CAR STEREO

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DUAL POWER-DISTRIBUTION SWITCHES

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DUAL POWER-DISTRIBUTION SWITCHES

文件：430.55 Kbytes Page：24 Pages