High Linearity Gain Blocks

The GRF2012 is a broadband gain block with low noise figure and industry leading linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity and return losses over 200 to 4000 MHz with a single match.(1)Configure • 0.7 GHz to 3.8 GHz (Single Match)\n• Gain: 15.0 dB @ 0.9 GHz\n• OIP3: 40 dBm @ 0.9 GHz\n• OP1dB: 22.5 dBm @ 0.9 GHz\n• NF: 1.9 dB @ 0.9 GHz\n• Operation to +105C Ambient\n• Flexible Bias Voltage and Current\n• Internally Matched to 50 Ω;

Broadband Linear Gain Block 0.05 to 6.0 GHz

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BROADBAND LINEAR GAIN BLOCK 0.05 to 6 GHz

FEATURES Flexible Bias Internally Matched to 50 Ω Process: GaAs pHEMT Compact 1.5 x 1.5 mm DFN-6 Package Reference: 5 V / 90 mA / 0.9 GHz Gain: 14.8 dB OIP3: 40 dBm OP1dB: 23 dBm EVB Noise Figure: 2.7 dB Reference: 8 V / 100 mA / 0.9 GHz Gain: 14.9 dB OIP3: 40 dBm OP1dB: 25 dBm EVB N

Broadband Linear Gain Block

GRF2012-W is a broadband gain block with low noise figure and industry leading linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity over 700 to 3800 MHz with a single match.(1)The device is operated from a Reference: 5V/90mA/900 MHz\n• Gain: 14.8 dB\n• NF: 2.7 dB\n• OIP3: 40.0 dBm\n• OP1dB: 23.0 dBm\n• AEC-Q100 Grade 2 Qualification Pending\n• Flexible Bias\n• Internally Matched to 50 Ω\n• Process: GaAs pHEMT;

Broadband Linear Gain Block

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NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT