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GRF2012-W

Broadband Linear Gain Block

GRF2012-W is a broadband gain block with low noise figure and industry leading linearity designed for small cell, wireless infrastructure and other high performance applications. It exhibits outstanding broadband NF, linearity over 700 to 3800 MHz with a single match.(1)The device is operated from a Reference: 5V/90mA/900 MHz\n• Gain: 14.8 dB\n• NF: 2.7 dB\n• OIP3: 40.0 dBm\n• OP1dB: 23.0 dBm\n• AEC-Q100 Grade 2 Qualification Pending\n• Flexible Bias\n• Internally Matched to 50 Ω\n• Process: GaAs pHEMT;

GUERRILLA

GRF2012-W

Broadband Linear Gain Block

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GUERRILLA

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

STMICROELECTRONICS

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

STMICROELECTRONICS

意法半导体

GRF2012-W产品属性

  • 类型

    描述

  • Frequency Range(GHz):

    0.05-3.8

  • Reference Conditions:

    5V/90mA/900MHz

  • Gain(dB):

    14.8

  • NF(dB):

    2.7

  • OP1dB (dBm):

    23.0

  • OIP3 (dBm):

    40.0

  • Vdd Range (V):

    2.7-5.0

  • Idd Range (mA):

    15-100

  • Features:

    Flat gain; low noise; high linearity; internally matched; flex bias

  • Package (mm):

    1.5 DFN-6

更新时间:2026-5-24 17:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SIRF
26+
PLCC
12735
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TELEDYNE
23+
SMD
880000
明嘉莱只做原装正品现货
SiRF
24+
QFP
803
SIRF
2402+
QFP32
8324
原装正品!实单价优!
SIRF
23+
SOP
5000
原装正品,假一罚十
SIRF
24+
QFP
9600
原装现货,优势供应,支持实单!
SiRF
22+
QFP
20000
公司只做原装 品质保障
SIRF
2447
QFP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
24+
SMD
5500
一级代理原装现货假一罚十
TELEDYNE
23+
N/A
7560
原厂原装

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