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GMB01

SEMICONDUCTOR PACKAGE DIMENSION

PACKAGE DIMENSION

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

GMB01

SEMICONDUCTOR PACKAGE DIMENSION

PACKAGE DIMENSION

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

GMB01

Very High-Speed Switching Diode

Epitaxial Planar Type Features • Glass sleeve structure • Allowable power dissipation : P = 250mW max. • Interterminal capacitance : c = 3.0pF max. • Reverse recovery time: trr = 4.0ns max. • Meets the requirements for high-speed automatic mounter (DO-34 package)

SANYO

三洋

GMB01

Very High-Speed Switching Diode

ONSEMI

安森美半导体

Very High-Speed Switching Diode

Epitaxial Planar Type Features • Glass sleeve structure • Allowable power dissipation : P = 250mW max. • Interterminal capacitance : c = 3.0pF max. • Reverse recovery time: trr = 4.0ns max. • Meets the requirements for high-speed automatic mounter (DO-34 package)

SANYO

三洋

Very High-Speed Switching Diode

ONSEMI

安森美半导体

更新时间:2026-5-23 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
2447
DO-35
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SANYO/三洋
25+
90000
全新原装现货
SANYO/三洋
23+
DO-35
50000
全新原装正品现货,支持订货

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