USB 2.0 UTMI Compliant Transceiver IP Core

• 480 Mbps\n\n• High performance USB 2.0  Transceiver compliant with the UTMI Specification proposed by Intel\n\n Process\n\n•0.35 µm\n\n•0.25 µm\n\n•0.18 µm\n\n•0.13 µm\n\n•90 nm\n\n•65 nmProcess\n\nProces\n\nP\n\nProcess\n\nProcess\n\n

USB 2.0 UTMI Compliant Transceiver IP Core

GENERAL DESCRIPTION GL800HT25 is a high performance USB 2.0 Transceiver compliant with the UTMI (USB 2.0 Transceiver Macrocell Interface) Specification proposed by Intel. The UTMI specification defines a standard interface to USB 2.0 high-speed transceivers that enables common design across proto

USB 2.0 UTMI Compliant Transceiver IP Core

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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