| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HiPerFET Power MOSFETs HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive | IXYS 艾赛斯 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
HiPerFET Power MOSFETs HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive | IXYS 艾赛斯 | | ||
11A, 812V N-CHANNEL POWER MOSFET 文件：165.26 Kbytes Page：4 Pages | UTC 友顺 | | ||
800V N-Channel MOSFET 文件：266.71 Kbytes Page：10 Pages | SEMIHOW | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO247 |
8000 |
只做原装现货 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IXYS |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
24+ |
TO247 |
5000 |
只做原装公司现货 |
|||
IXYS/艾赛斯 |
21+ |
TO247 |
10000 |
原装现货假一罚十 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IXYS |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IXYS |
24+ |
TO-247 |
8866 |
||||
IXYS |
25+ |
TO-247 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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2019-4-16
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