位置：首页 > IC中文资料第8730页 > GE80N03
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GE80N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：304.3 Kbytes Page：5 Pages | ETL 亚历电子 |   | |
GE80N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：300.54 Kbytes Page：5 Pages | GTM 勤益投资控股 | | |
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | |
GE80N03产品属性
- 类型
描述
- 型号
GE80N03
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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