丝印代码：GBJ410；Bridge Rectifiers

Features ● UL recognition, file #E230084 ● Thin single in-line package ● High surge current capability ● Solder dip 275 °C max. 7 s, per JESD 22-B106

ASEMI Bridge Rectifier

Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High case dielectric strength of 1500VRMS Ideal for printed circuit boards High surge current capability

BRIDGE RECTIFIERS 3.0 to 6.0 Amps

BRIDGE RECTIFIERS 3.0 to 6.0 Amps BRIDGE RECTIFIERS 6.0 to 8.0 Amps

Single-phase Silicon Bridge Rectifier

Features • Low reverse leakage • High forward surge capability • 170 A Surge overload rating:170 Amperes peak

4A 1000V Rectifying bridge

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SINGLE PHASE 4.0 AMP BRIDGE RECTIFIERS

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Glass Passivated Single Phase Bridge Rectifiers

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SINGLE PHASE 4.0 AMP BRIDGE RECTIFIERS

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标準桥式整流器

整流桥

整流桥

GLASS PASSIVATED BRIDGE RECTIFIER

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N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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