位置：首页 > IC中文资料第8709页 > GBC557
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GBC557 | The GBC557 is designed for drive and output-stages of audio amplifiers 文件：186.87 Kbytes Page：2 Pages | ETL 亚历电子 |   | |
GBC557 | PNP SILICON TRANSISTOR 文件：184.66 Kbytes Page：2 Pages | GTM 勤益投资控股 | | |
GBC557 | The GBC557 is designed for drive and output-stages of audio amplifiers | ETL 亚历电子 | | |
Amplifier Transistors(PNP Silicon) Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
Amplifier Transistors Amplifier Transistors PNP Silicon | MOTOROLA 摩托罗拉 | | ||
Amplifier Transistors Amplifier Transistors PNP Silicon | MOTOROLA 摩托罗拉 | | ||
Amplifier Transistors(PNP Silicon) Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
RF LOW POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa | MOTOROLA 摩托罗拉 | |
GBC557产品属性
- 类型
描述
- 型号
GBC557
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
PNP SILICON TRANSISTOR
GBC557规格书下载地址
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GBC557数据表相关新闻
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