位置：首页 > IC中文资料第11862页 > GB200TS60NPBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GB200TS60NPBF | INT-A-PAKHalf-Bridge(UltrafastSpeedIGBT),209A FEATURES •Generation5NonPunchThrough(NPT)technology •Ultrafast:Optimizedforhardswitchingspeed8kHzto60kHz •LowVCE(on) •10μsshortcircuitcapability •SquareRBSOA •PositiveVCE(on)temperaturecoefficient •HEXFRED®antiparalleldiodewithultrasoftreverserecoveryc | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
HALF-BRIDGEIGBTINT-A-PAKUltra-FastSpeedIGBT HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFRED™antiparalleldiodeswithultra-softrecovery •Industrystan | IRF International Rectifier |  | | |
Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),200A Half-BridgeIGBTINT-A-PAK(UltrafastSpeedIGBT),200A FEATURES •Generation4IGBTtechnology •Ultrafast:Optimizedforhighspeed8kHzto40kHzinhardswitching,>200kHzinresonant mode •Verylowconductionandswitchinglosses •HEXFRED®antiparalleldiodeswithul | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Ultra-FastTMSpeedIGBT HALF-BRIDGEIGBTINT-A-PAK Ultra-FastSpeedIGBT Features •Generation4IGBTtechnology •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Verylowconductionandswitchinglosses •HEXFREDTMantiparalleldiodeswithul | IRF International Rectifier | | | |
Ultrafast:optimizedforhardswitchingspeed 文件：204.3 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
GB200TS60NPBF产品属性
- 类型
描述
- 型号
GB200TS60NPBF
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
INT-A-PAK 'Half-Bridge'(Ultrafast Speed IGBT), 209 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JKMT |
23+ |
30971 |
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11+ |
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6000 |
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Berechiah |
1715+ |
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251156 |
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JKMT |
SMD |
4000 |
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CHINAXYJ |
23+ |
SMD |
9868 |
专做原装正品,假一罚百! |
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