Ultrafast: optimized for hard switching speed

文件：204.3 Kbytes Page：9 Pages

封装/外壳：INT-A-PAK（3 + 4） 包装：盒 描述：IGBT MOD 600V 209A INT-A-PAK 分立半导体产品 晶体管 - IGBT - 模块

INT-A-PAK \Half Bridge\ (Ultrafast Speed IGBT), 209 A

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFRED™antiparallel diodes with ultra-soft recovery • Industry stan

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A

Half-Bridge IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED® antiparallel diodes with ul

Ultra-FastTM Speed IGBT

HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM antiparallel diodes with ul

INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 209 A

FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery c