位置：首页 > IC中文资料第283页 > GAL22V10D-25LP
GAL22V10D-25LP价格
参考价格：￥75.7917
型号：GAL22V10D-25LPI 品牌：Lattice Semi 备注：这里有GAL22V10D-25LP多少钱，2024年最近7天走势，今日出价，今日竞价，GAL22V10D-25LP批发/采购报价，GAL22V10D-25LP行情走势销售排行榜，GAL22V10D-25LP报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GAL22V10D-25LP | HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 |  |   |
GAL22V10D-25LP | GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | |
GAL22V10D-25LP | ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | |
GAL22V10D-25LP | AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | |
GAL22V10D-25LP | AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | |
GAL22V10D-25LP | 封装/外壳：24-DIP（0.300"，7.62mm） 包装：散装 描述：IC CPLD 10MC 25NS 24DIP 集成电路（IC） CPLD（复杂可编程逻辑器件） | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
封装/外壳：24-DIP（0.300"，7.62mm） 包装：管件 描述：IC CPLD 10MC 25NS 24DIP 集成电路（IC） CPLD（复杂可编程逻辑器件） | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | | |
AllDevicesDiscontinued 文件：718.73 Kbytes Page：23 Pages | LatticeLattice Semiconductor Corporation 莱迪思半导体 | | |
GAL22V10D-25LP产品属性
- 类型
描述
- 型号
GAL22V10D-25LP
- 功能描述
SPLD - 简单可编程逻辑器件 5V 22 I/O
- RoHS
否
- 制造商
Texas Instruments
- 逻辑系列
TICPAL22V10Z
- 大电池数量
10
- 最大工作频率
66 MHz
- 延迟时间
25 ns
- 工作电源电压
4.75 V to 5.25 V
- 电源电流
100 uA
- 最大工作温度
+ 75 C
- 最小工作温度
0 C
- 安装风格
Through Hole
- 封装/箱体
DIP-24
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Lattice |
23+ |
DIP |
18000 |
||||
LATTICE/莱迪斯 |
21+ |
DIP |
5000 |
原装现货/假一赔十/支持第三方检验 |
|||
Lattice(莱迪斯) |
23+ |
标准封装 |
75936 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Lattice |
2015+ |
SMD/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
LATTICE |
17+ |
原厂原装 |
1110 |
只做原装 |
|||
LATTICE |
18+ |
DIP24 |
9860 |
一级代理/全新现货/长期供应! |
|||
21+ |
TSSOP28 |
20000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
LATTICE/莱迪斯 |
22+ |
DIP24 |
390000 |
只有原装正品 |
|||
LATTICE |
18+ |
PDIP |
60 |
现货正品专供军研究院 |
|||
LATTICE/莱迪斯 |
22+ |
DIP24 |
8000 |
只做原装正品现货 |
GAL22V10D-25LP芯片相关品牌
GAL22V10D-25LP规格书下载地址
GAL22V10D-25LP参数引脚图相关
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HDMI连接器
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- GAX-2-64
- GATELEAD-28129
- GASSN-GM-393
- GASSENSOREVM
- GASKET
- GAP-CAB
- GAP3SLT33-220FP
- GAP3SLT33-214
- GAP1605
- GAP103
- GAP05SLT80-220
- GANFETBOOKSIMPLIFIEDCHINESEVERSION
- GAM0404
- GALILEO2934953
- GALILEO2.P
- GALILEO1.Y936726
- GALILEO1.Y
- GALI-49
- GALI-4
- GALI-39
- GALI-33
- GALI-3
- GALI-29
- GALI-24
- GALI-21
- GALI-2
- GALI-19
- GALI-1
- GALI_59
- GALI_49
- GALI_39
- GALI_29
- GALI_19
- GAL6002
- GAL6001
- GAL504P
- GAL504N
- GAL26CV12C-7LJ
- GAL22V10D-25LPI
- GAL20V8
- GAL1883
- GAL16V8D-5LJ
- GAL16V8D-15LJN
- GAL16V8
- GAL16LV8D-3LJ
- GAINEQUALIZERSAMPLEKIT
- GAH504P
- GAH504N
- GAH404
- GAH403
- GAH402
- GAH401
- GAH304
- GAH303
- GAH302
- GAH301
- GAG01Z
- GAG01Y
- GAG01A
- GAG01
- GAD1213024
- GABJ506
- GABJ504
- GABJ503
- GAA8038-230BB
- GAA800BB18A2
- GAA6R014
- GAA6R012
- GAA6R005
- GAA3R505
- GAA16006
- GAA16005
- GAA16004
- GAA10006
- GAA10005
- GA8-6D05R
- GA8-6D05
- GA8-6B02
- GA8-2B02
GAL22V10D-25LP数据表相关新闻
GALI-4F+
GALI-4F+
2022-9-1GAL22V10D-25LJ，集成电路（IC）
全新原装，公司现货销售
2019-8-21GAL22V10D-25LP，集成电路（IC） 嵌入式-CPLD（复杂可编程逻辑器件）
全新原装，公司现货销售
2019-8-21GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
2019-5-20GAL22V10D-15LPN原装现货特价销售集成电路（IC）
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
2019-5-20GALI-21+单片放大器射频IC深圳市益中天科技发展有限公司
GALI-21+单片放大器射频IC
2019-4-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
