位置:首页 > IC中文资料第283页 > GAL22V10D-25LJ
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
GAL22V10D-25LJ | High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | ||
GAL22V10D-25LJ | GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | ||
GAL22V10D-25LJ | Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | ||
GAL22V10D-25LJ | All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | ||
GAL22V10D-25LJ | 封装/外壳:28-LCC(J 形引线) 包装:托盘 描述:IC CPLD 10MC 25NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件) | ETC 知名厂家 | ETC | |
GAL22V10D-25LJ | IC CPLD 10MC 25NS 28PLCC | Lattice 莱迪思 | ||
GAL22V10D-25LJ | All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | |||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | |||
IC CPLD 10MC 25NS 28PLCC | Lattice 莱迪思 | |||
封装/外壳:28-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 25NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件) | ETC 知名厂家 | ETC | ||
IC CPLD 10MC 25NS 28PLCC | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 |
GAL22V10D-25LJ产品属性
- 类型
描述
- 型号
GAL22V10D-25LJ
- 功能描述
SPLD - 简单可编程逻辑器件 5V 22 I/O
- RoHS
否
- 制造商
Texas Instruments
- 逻辑系列
TICPAL22V10Z
- 大电池数量
10
- 最大工作频率
66 MHz
- 延迟时间
25 ns
- 工作电源电压
4.75 V to 5.25 V
- 电源电流
100 uA
- 最大工作温度
+ 75 C
- 最小工作温度
0 C
- 安装风格
Through Hole
- 封装/箱体
DIP-24
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LATTICE |
23+ |
PLCC28 |
27542 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
LATTICE |
2023+ |
PLCC-28 |
3000 |
进口原装现货 |
|||
LATTICE |
15+ |
PLCC |
18000 |
专营LATTICE只做原装 |
|||
LATTICE |
98+ |
PLCC |
37 |
原装现货海量库存欢迎咨询 |
|||
LATTICE/莱迪斯 |
0916+ |
PLCC |
111 |
原装正品 可含税交易 |
|||
Lattice |
2318+ |
PLCC-28 |
4980 |
Lattice全系列进口原装特价 |
|||
LATTICE |
25+ |
BULKPL |
1200 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
LATTICE |
24+ |
28-PLCC11.51x11.51 |
13500 |
免费送样原盒原包现货一手渠道联系 |
|||
LATTICE |
00+ |
372 |
公司优势库存 热卖中! |
||||
LATTICE |
24+ |
PLCC |
5000 |
全新原装正品,现货销售 |
GAL22V10D-25LJ芯片相关品牌
GAL22V10D-25LJ规格书下载地址
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2019-4-9
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