型号 功能描述 生产厂家 企业 LOGO 操作
GAL22V10D-25LJ

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-25LJ

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-25LJ

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL22V10D-25LJ

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

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莱迪思

GAL22V10D-25LJ

封装/外壳:28-LCC(J 形引线) 包装:托盘 描述:IC CPLD 10MC 25NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL22V10D-25LJ

IC CPLD 10MC 25NS 28PLCC

Lattice

莱迪思

GAL22V10D-25LJ

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

IC CPLD 10MC 25NS 28PLCC

Lattice

莱迪思

封装/外壳:28-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 25NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

IC CPLD 10MC 25NS 28PLCC

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-25LJ产品属性

  • 类型

    描述

  • 型号

    GAL22V10D-25LJ

  • 功能描述

    SPLD - 简单可编程逻辑器件 5V 22 I/O

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2025-9-24 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LATTICE
23+
PLCC28
27542
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LATTICE
2023+
PLCC-28
3000
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LATTICE
15+
PLCC
18000
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LATTICE
98+
PLCC
37
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LATTICE/莱迪斯
0916+
PLCC
111
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Lattice
2318+
PLCC-28
4980
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LATTICE
25+
BULKPL
1200
百分百原装正品 真实公司现货库存 本公司只做原装 可
LATTICE
24+
28-PLCC11.51x11.51
13500
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LATTICE
00+
372
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LATTICE
24+
PLCC
5000
全新原装正品,现货销售

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