位置:首页 > IC中文资料第283页 > GAL22V10D-25LPNI
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
GAL22V10D-25LPNI | Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | ||
GAL22V10D-25LPNI | GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | ||
GAL22V10D-25LPNI | All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | ||
GAL22V10D-25LPNI | 封装/外壳:24-DIP(0.300",7.62mm) 包装:管件 描述:IC CPLD 10MC 25NS 24DIP 集成电路(IC) CPLD(复杂可编程逻辑器件) | ETC 知名厂家 | ETC | |
GAL22V10D-25LPNI | IC CPLD 10MC 25NS 24DIP | Lattice 莱迪思 | ||
GAL22V10D-25LPNI | All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | ||
GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les | Lattice 莱迪思 | |||
Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 | |||
All Devices Discontinued 文件:718.73 Kbytes Page:23 Pages | Lattice 莱迪思 |
GAL22V10D-25LPNI产品属性
- 类型
描述
- 型号
GAL22V10D-25LPNI
- 功能描述
SPLD - 简单可编程逻辑器件 HI PERF E2CMOS PLD
- RoHS
否
- 制造商
Texas Instruments
- 逻辑系列
TICPAL22V10Z
- 大电池数量
10
- 最大工作频率
66 MHz
- 延迟时间
25 ns
- 工作电源电压
4.75 V to 5.25 V
- 电源电流
100 uA
- 最大工作温度
+ 75 C
- 最小工作温度
0 C
- 安装风格
Through Hole
- 封装/箱体
DIP-24
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LATTICE |
23+ |
DIP-24 |
23018 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
LATTICE |
2023+ |
DIP |
5800 |
进口原装,现货热卖 |
|||
LATTICE |
1103+ |
DIP |
313 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LATTICE |
15+ |
DIP |
18000 |
专营LATTICE只做原装 |
|||
Lattice(莱迪斯) |
2021/2022+ |
标准封装 |
3500 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
LATTICE |
24+ |
DIP |
7200 |
绝对原装现货,价格低,欢迎询购! |
|||
Lattice |
2318+ |
DIP-24 |
4980 |
Lattice全系列进口原装特价 |
|||
LATTICE/莱迪斯 |
24+ |
DIP24 |
990000 |
明嘉莱只做原装正品现货 |
|||
LATTICE/莱迪斯 |
24+ |
N/A |
13718 |
只做原装 公司现货库存 |
|||
LATTICE/莱迪斯 |
24+ |
DIP |
60000 |
GAL22V10D-25LPNI芯片相关品牌
GAL22V10D-25LPNI规格书下载地址
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- GAL22V10D-5LJN
- GAL22V10D-5LJI
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- GAL22V10D-25QPN
- GAL22V10D25QPN
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GAL22V10D-25LPNI数据表相关新闻
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DdatasheetPDF页码索引
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