型号 功能描述 生产厂家 企业 LOGO 操作
GAL22V10D-25LPNI

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL22V10D-25LPNI

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-25LPNI

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-25LPNI

封装/外壳:24-DIP(0.300",7.62mm) 包装:管件 描述:IC CPLD 10MC 25NS 24DIP 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL22V10D-25LPNI

IC CPLD 10MC 25NS 24DIP

Lattice

莱迪思

GAL22V10D-25LPNI

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-25LPNI产品属性

  • 类型

    描述

  • 型号

    GAL22V10D-25LPNI

  • 功能描述

    SPLD - 简单可编程逻辑器件 HI PERF E2CMOS PLD

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2025-9-24 14:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LATTICE
23+
DIP-24
23018
##公司主营品牌长期供应100%原装现货可含税提供技术
LATTICE
2023+
DIP
5800
进口原装,现货热卖
LATTICE
1103+
DIP
313
一级代理,专注军工、汽车、医疗、工业、新能源、电力
LATTICE
15+
DIP
18000
专营LATTICE只做原装
Lattice(莱迪斯)
2021/2022+
标准封装
3500
原厂原装现货订货价格优势终端BOM表可配单提供样品
LATTICE
24+
DIP
7200
绝对原装现货,价格低,欢迎询购!
Lattice
2318+
DIP-24
4980
Lattice全系列进口原装特价
LATTICE/莱迪斯
24+
DIP24
990000
明嘉莱只做原装正品现货
LATTICE/莱迪斯
24+
N/A
13718
只做原装 公司现货库存
LATTICE/莱迪斯
24+
DIP
60000

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