High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

High Performance E2CMOS PLD Generic Array Logic

Description The GAL18V10, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide a very flexible 20-pin PLD. CMOS circuitry allows the GAL18V10 to consume much less power when compared to its bipolar

封装/外壳：20-DIP（0.300"，7.62mm） 包装：管件 描述：IC CPLD 10MC 10NS 20DIP 集成电路（IC） CPLD（复杂可编程逻辑器件）

IC CPLD 10MC 10NS 20DIP

IC CPLD 10MC 15NS 20PLCC

封装/外壳：20-LCC（J 形引线） 包装：管件 描述：IC CPLD 10MC 15NS 20PLCC 集成电路（IC） CPLD（复杂可编程逻辑器件）

IC CPLD 10MC 15NS 20DIP