型号 功能描述 生产厂家&企业 LOGO 操作
GAL18V10

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

封装/外壳:20-DIP(0.300",7.62mm) 包装:管件 描述:IC CPLD 10MC 10NS 20DIP 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

封装/外壳:20-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 15NS 20PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL18V10产品属性

  • 类型

    描述

  • 型号

    GAL18V10

  • 制造商

    LATTICE

  • 制造商全称

    Lattice Semiconductor

  • 功能描述

    High Performance E2CMOS PLD Generic Array Logic

更新时间:2025-7-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LAI
24+
NA/
8805
原装现货,当天可交货,原型号开票
LATTICE/莱迪斯
25+
20-PLCC9x9
996880
只做原装,欢迎来电资询
Lattice Semiconductor Corporat
23+
20-LCC
11200
主营:汽车电子,停产物料,军工IC
LATTICE
24+
DIP20
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
LATTICE
24+
DIP
8540
只做原装正品现货或订货假一赔十!
GAL
23+
DIP
65480
LATTICE
20+
PLCC20
35830
原装优势主营型号-可开原型号增税票
LAT
24+/25+
232
原装正品现货库存价优
LATTICE
24+
PLCC
1000
原装正品现货
Lattice
2015+
DIP
19889
一级代理原装现货,特价热卖!

GAL18V10芯片相关品牌

  • AUSTIN
  • CIT
  • CONTRINEX
  • EPCOS
  • GMT
  • LRC
  • MOLEX5
  • OPLINK
  • Samtec
  • TOTAL-POWER
  • TSC
  • Vishay

GAL18V10数据表相关新闻