型号 功能描述 生产厂家&企业 LOGO 操作
GAL18V10

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor

莱迪思莱迪思半导体公司

Lattice

封装/外壳:20-DIP(0.300",7.62mm) 包装:管件 描述:IC CPLD 10MC 10NS 20DIP 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

封装/外壳:20-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 15NS 20PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL18V10产品属性

  • 类型

    描述

  • 型号

    GAL18V10

  • 制造商

    LATTICE

  • 制造商全称

    Lattice Semiconductor

  • 功能描述

    High Performance E2CMOS PLD Generic Array Logic

更新时间:2025-5-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Lattice(莱迪斯)
24+
标准封装
8548
原厂渠道供应,大量现货,原型号开票。
LAI
24+
NA/
8805
原装现货,当天可交货,原型号开票
LATTICE
2016+
PLCC20
8000
只做原装,假一罚十,内存,闪存,公司可开17%增值税
LATTICE
24+
PLCC
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
LATTICE
20+
PLCC20
35830
原装优势主营型号-可开原型号增税票
LATTICE
24+
DIP20
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
LATTICE
10+
PLCC
42
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Lattice
23+
SOP/QFP
3200
全新原装、诚信经营、公司现货销售
LAT
24+/25+
232
原装正品现货库存价优
Lattice
2015+
DIP
19889
一级代理原装现货,特价热卖!

GAL18V10芯片相关品牌

  • BILIN
  • Cree
  • DIT
  • ETC
  • HY
  • MOLEX2
  • OHMITE
  • RCD
  • SAMESKY
  • spansion
  • TOKEN
  • VBSEMI

GAL18V10数据表相关新闻