型号 功能描述 生产厂家&企业 LOGO 操作
GAL18V10

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL18V10,at7.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovideaveryflexible20-pinPLD.CMOScircuitryallowstheGAL18V10toconsumemuchlesspowerwhencomparedtoitsbipolar

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

封装/外壳:20-DIP(0.300",7.62mm) 包装:管件 描述:IC CPLD 10MC 10NS 20DIP 集成电路(IC) CPLD(复杂可编程逻辑器件)

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

封装/外壳:20-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 15NS 20PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

LatticeLattice Semiconductor Corporation

莱迪思莱迪思半导体

Lattice

GAL18V10产品属性

  • 类型

    描述

  • 型号

    GAL18V10

  • 制造商

    LATTICE

  • 制造商全称

    Lattice Semiconductor

  • 功能描述

    High Performance E2CMOS PLD Generic Array Logic

更新时间:2024-6-25 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LAT
232
原装正品长期供货,如假包赔包换 徐小姐13714450367
LATTICE
23+
DIP20
20000
原厂原装正品现货
Lattice Semiconductor Corporat
21+
20PDIP
13880
公司只售原装,支持实单
LAI
2022
DIP
80000
原装现货,OEM渠道,欢迎咨询
LATTICE
17+
PLCC
1000
原装正品现货
LATTICE
17+
PLCC20
9988
只做原装进口,自己库存
LATTICE
23+
PLCC20
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
LATTICE/莱迪斯
22+
DIP
12245
现货,原厂原装假一罚十!
Lattice
23+
SOP/QFP
3200
全新原装、诚信经营、公司现货销售
Lattice
7
公司优势库存 热卖中!!

GAL18V10芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

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