GAL16V8D参数引脚图莱迪思现货供应价格Lattice-IC资料网

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GAL16V8D价格

参考价格：￥16.8516

型号：GAL16V8D-15LJN 品牌：Lattice Semiconductor 备注：这里有GAL16V8D多少钱，2025年最近7天走势，今日出价，今日竞价，GAL16V8D批发/采购报价，GAL16V8D行情走势销售排行榜，GAL16V8D报价。

型号	功能描述	生产厂家&企业
GAL16V8D	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJ	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJ	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LJNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LP	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LPNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LS	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10LS	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJ	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QJN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QP	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-10QPN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LJ	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LJ	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LJI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LJI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LJN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LJNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LP	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LP	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LPI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LPI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LPN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LPNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LS	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15LS	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15QJ	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15QJ	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15QJN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15QP	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15QP	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-15QPN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-20QJI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-20QJI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-20QJNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-20QPI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-20QPI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-20QPNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LJ	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LJ	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LJI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LJI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LJN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LJNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LP	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LP	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LPI	HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL16V8,at3.5nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestspeedperformanceavailableinthePLDmarket.Highspeederasetimes( Features •HIGHPERFORMANCE	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LPI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LPN	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LPNI	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司
GAL16V8D-25LS	AllDevicesDiscontinued Features •HIGHPERFORMANCEE2CMOS®TECHNOLOGY —3.5nsMaximumPropagationDelay —Fmax=250MHz —3.0nsMaximumfromClockInputtoDataOutput —UltraMOS® AdvancedCMOSTechnology •50to75REDUCTIONINPOWERFROMBIPOLAR —75mATypIcconLowPowerDevice —45mATypIccon	LatticeLattice Semiconductor 莱迪思莱迪思半导体公司

GAL16V8D产品属性

类型
描述
型号
GAL16V8D
制造商
LATTICE
制造商全称
Lattice Semiconductor
功能描述
High Performance E2CMOS PLD Generic Array Logic

GAL16V8D供应商更多...

更新时间：2025-8-3 23:22:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市富利微电子科技有限公司	GAL16V8D-15LPI	LATTICE/莱迪斯	24+	DIP-20	30000	房间原装现货特价热卖,有单详谈	询价
深圳市得捷芯城科技有限公司	GAL16V8D-7LP	LATTE/莱迪斯	24+	NA/	4812	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	GAL16V8D-7LJ	Lattice(莱迪斯)	24+	标准封装	12608	原厂渠道供应,大量现货,原型号开票。	询价
深圳市金芯世纪电子有限公司	GAL16V8D-10QJ	LATTICE/莱迪斯	22+	PLCC	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	GAL16V8D-25LJ	LATTICE/莱迪斯	25+	PLCC	54648	百分百原装现货实单必成欢迎询价	询价
深圳市华睿芯科技有限公司	GAL16V8D-15LJN	LATTICE/莱迪斯	24+	PLCC	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市冠亿通科技有限公司	GAL16V8D-25LPN	LATTICE/莱迪斯	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市星宇佳科技有限公司	GAL16V8D-15LPN内存芯片	LATTICE/莱迪斯	1207	DIPEOL	200		询价
深圳市明嘉莱科技有限公司	GAL16V8D-15QPN	LATTICE/莱迪斯	25+	DIP	880000	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	GAL16V8D-25LP	LATTICE/莱迪斯	1950+	DIP	6852	只做原装正品现货!或订货假一赔十!	询价

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GAL16V8D数据表相关新闻

G9SX-BC202-RT DC24 控制器 - 机械安全通用 24VDC 电源 DIN 轨道
G9SX-BC202-RTDC24控制器-机械安全通用24VDC电源DIN轨道
2024-9-18
GA355QR7GF222KW01L
www.58chip.com
2022-5-20
G950-06210-01
開發板及套件-ARMThisnewDevBoardversionhasthesamebuildastheexisting1GBDevBoardwith4GBRAMbuiltin.
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搜索： SMD/SMTSPLD-简单可编程逻辑器件,TSSOP-20SPLD-简单可编程逻辑器件,TSSOP-20SPLD-简单可编程逻辑器件,STQFN-12SPLD-简单可编程逻辑器件
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GAL16V8D-15LD/883
2020-7-10
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SPLD-简单可编程逻辑器件
2019-12-18

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GAL16V8D价格

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GAL16V8D供应商更多...

GAL16V8D芯片相关品牌

GAL16V8D规格书下载地址

GAL16V8D参数引脚图相关

GAL16V8D数据表相关新闻

G9SX-BC202-RT DC24 控制器 - 机械安全 通用 24VDC 电源 DIN 轨道

GA355QR7GF222KW01L

G950-06210-01

GAL16V8D-15LJN

GAL16V8D-15LD/883产品规格参数

GAL16V8D-15LD/883

DdatasheetPDF页码索引

G9SX-BC202-RT DC24 控制器 - 机械安全通用 24VDC 电源 DIN 轨道